Effect of Argon Flow Rate on mc-Silicon Ingot Grown by DS Process for PV Application: A Numerical Investigation of Non-Metallic Impurities

Bharathwaj, M.; Sugunraj, S.; Karuppasamy, P.; Srinivasan, M.; Ramasamy, P.

doi:10.1007/s12633-023-02490-8

Cited by 7 publications

(1 citation statement)

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“…An argon gas purge is used to regulate the atmosphere inside the growth chamber at pressures between 20 and 100 m bar. [15][16][17][18][19][20][21][22][23] A seed crystal with a specified crystallographic orientation is brought into contact with the melt after the feedstock has fully melted. The temperature has been adjusted to nearly the silicon's melting point.…”

Section: Cz Techniquementioning

confidence: 99%

A Critical Review of The Process and Challenges of Silicon Crystal Growth for Photovoltaic Applications

Sekar,

Thamotharan,

Manickam

et al. 2023

Cryst. Res. Technol.

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Crystalline silicon (c‐Si) solar cells have been accepted as the only environmentally and economically acceptable alternative source to fossil fuels. The majority of commercially available solar cells of all Photovoltaic (PV) cells produced worldwide, are made of crystalline silicon. Due to their excellent price/performance ratio and their demonstrated ecological durability, crystalline silicon wafers are by far the most common absorber material used in the production of solar cells and modules today. These wafers are primarily made using either a directional solidification that produces large‐grained multi‐crystalline (mc‐Si) wafers with a greater defect density or a solar‐optimized Czochralski (Cz) growing method that produces crystalline silicon with low defect density (c‐Si). The grown crystalline wafer contains foreign atoms that enhance the wire saw damage, reduce the minority carrier lifetime as a result get the minimum conversion efficiency of the solar cells. The current review illustrates how the elements of the furnace system affect impurity production and distribution of the developed silicon ingot and how the growth process affects the chemical reaction. Additionally, it covers the outcomes of simulations and experiments conducted on the growing process of c‐Si and mc‐Si ingots and recommends the most appropriate processing parameters, geometrical system, and argon gas flow rate.

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