Effect of Argon-Oxygen Mixing Gas during Magnetron Sputtering on TiO<sub>2</sub> Coatings

Madaoui, N.; Bait, L.; Kheyar, K.; Saoula, Nadia

doi:10.1155/2017/4926543

Cited by 14 publications

(10 citation statements)

References 37 publications

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“…The improvement in the crystallinity with an increase in the O 2 ratio may be due to the variations in the ions' momentum during the deposition process. Slow deposition rate in the oxygen environment enhances surface diffusion, which can cause better adhesion, nucleation, and crystallinity [9]. Further, it is worth noting that even in the presence of pure oxygen, we could get an excellent quality thin lm indicating that the target is not oxidized entirely even in the presence of reactive gas.…”

Section: Crystal Structure Of the Thin Lmsmentioning

confidence: 92%

Dielectric Properties and Impedance Spectroscopy of RF Sputtered Nanocrystalline (Mg0.95Zn0.05)TiO3 Films for Electronic Applications

Gogoi¹,

Pr²,

Ka³

et al. 2021

Preprint

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Oxide thin films attracted significant attention because of their favorable responses, especially dielectric and stable electrical properties. In this study, nanocrystalline (Mg0.95Zn0.05)TiO3 (MZT) films are deposited on Pt/TiO2/SiO2/Si and quartz substrates by radio-frequency (RF) reactive magnetron sputtering. The effect of deposition gas ratio, i.e., the proportion of oxygen and argon (O2/Ar) on broad band and microwave dielectric properties and impedance spectroscopy of MZT films are investigated. The dielectric properties showed a wide range of variation with the different O2/Ar ratios. The MZT film deposited in a pure oxygen environment showed the best dielectric properties, and the plasma survived which shows that the target is not fully oxidized. The impedance spectroscopy of the film deposited under a pure oxygen environment exhibited the single semi-circular arc. The Ag/ MZT/Pt thin films capacitors exhibited the best dielectric constant with low loss tangent. The microwave dielectric constant measured at different spot frequencies in the GHz range displayed inferior dielectric response as compared to their bulk counterparts. An equivalent circuit model to explain the Nyquist plots of MZT films are worked out. The observed electrical and dielectric characteristics of the thin films suggest interesting applications in dielectric mirror and integrated circuits.

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Section: Crystal Structure Of the Thin Lmsmentioning

confidence: 92%

Dielectric Properties and Impedance Spectroscopy of RF Sputtered Nanocrystalline (Mg0.95Zn0.05)TiO3 Films for Electronic Applications

Gogoi¹,

Pr²,

Ka³

et al. 2021

Preprint

View full text Add to dashboard Cite

show abstract

“…Additionally, the film's protective efficiency (Pe) was calculated from the polarization curve using the following equation: [ 58 ]

P e = [1 - (\frac{I_{corr film}}{{normalI}_{corr substrat}})] \times 100

…”

Section: Methodsmentioning

confidence: 99%

Effects of Nitrogen Content on the Structural, Mechanical, and Corrosion Properties of ZrN Thin Films Grown on AISI 316L by Radiofrequency Magnetron Sputtering

Azibi

Saoula

Madaoui

et al. 2021

Crystal Research and Technology

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Zirconium nitride films are deposited onto stainless steel AISI 316L and silicon (100) by radio frequency magnetron sputtering at different nitrogen flow ratios [N2/(Ar+N2)] varied between 0 and 0.25). Scanning electron microscope, atomic force microscopy, X‐ray diffraction (XRD), and Raman are used to investigate the surface morphology and microstructure of the thin films. The mechanical and electrochemical properties of all coatings are evaluated and compared with the uncoated AISI 316L to explore the efficiency of surface modification. The XRD and Raman analysis show that all the films are crystalline. This shows that the increased nitrogen content leads to a transformation from hexagonal α‐Zr phase to cubic c‐Zr and then to mixed α‐Zr and face centered cubic c‐ZrN phases. The films deposited with nitrogen flow ratio of 0.2 show the highest hardness of 32.2 GPa. Using the potentiodynamic polarization method, the corrosion behavior of the films is studied in Hank's solution. The comparison between uncoated and coated substrates shows a decrease in corrosion current density for all coated samples.

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“…where i corr,film and i corr,substrate are the corrosion current densities of the coating and substrate, respectively [26].…”

Section: Methodsmentioning

confidence: 99%

The influence of substrate bias voltage on the electrochemical properties of ZrN thin films deposited by radio-frequency magnetron sputtering: Biomedical application

Azibi

Saoula

Aknouche

2019

Journal of Electrical Engineering

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In order to study the influence of the substrate bias on the properties of ZrN thin films deposited by radio-frequency magnetron sputtering for biomedical application. Films of ZrN were grown onto 316L stainless steel substrate using radio-frequency (rf) magnetron sputtering from a pure zirconium target in Ar - N2 gas mixture. The substrate bias voltage was varied from 0 to −100 V, which produces a variation in the structural and electrochemical properties of the obtained films. The deposited films were characterized by X-Rays Diffraction, Atomic Force Microscopy, scanning force microscopy and potentiodynamic polarization.

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Effect of Argon-Oxygen Mixing Gas during Magnetron Sputtering on TiO₂ Coatings

Cited by 14 publications

References 37 publications

Dielectric Properties and Impedance Spectroscopy of RF Sputtered Nanocrystalline (Mg0.95Zn0.05)TiO3 Films for Electronic Applications

Dielectric Properties and Impedance Spectroscopy of RF Sputtered Nanocrystalline (Mg0.95Zn0.05)TiO3 Films for Electronic Applications

Effects of Nitrogen Content on the Structural, Mechanical, and Corrosion Properties of ZrN Thin Films Grown on AISI 316L by Radiofrequency Magnetron Sputtering

The influence of substrate bias voltage on the electrochemical properties of ZrN thin films deposited by radio-frequency magnetron sputtering: Biomedical application

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Effect of Argon-Oxygen Mixing Gas during Magnetron Sputtering on TiO2 Coatings

Cited by 14 publications

References 37 publications

Dielectric Properties and Impedance Spectroscopy of RF Sputtered Nanocrystalline (Mg0.95Zn0.05)TiO3 Films for Electronic Applications

Dielectric Properties and Impedance Spectroscopy of RF Sputtered Nanocrystalline (Mg0.95Zn0.05)TiO3 Films for Electronic Applications

Effects of Nitrogen Content on the Structural, Mechanical, and Corrosion Properties of ZrN Thin Films Grown on AISI 316L by Radiofrequency Magnetron Sputtering

The influence of substrate bias voltage on the electrochemical properties of ZrN thin films deposited by radio-frequency magnetron sputtering: Biomedical application

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Effect of Argon-Oxygen Mixing Gas during Magnetron Sputtering on TiO₂ Coatings