Effect of atomic silicon and germanium beams on the growth kinetics of Si1 – x Ge x layers in Si–GeH4 molecular beam epitaxy

Orlov, L. K.; Ivin, S. V.; Фомин, В. М.

doi:10.1134/s1063784217030161

Cited by 1 publication

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“…Specifically, nanophases and nanolayers of metal silicides and germanides have promising applications in the design of microwave transistors and integrated circuits, and Ge x Si 1−x /Si heterostructures may be used in lightemitting diodes, photodetectors, laser sources, and optical and electronic instruments [5][6][7][8][9][10][11][12]. In view of this, the composition, the electronic and crystal structure, and the emission and optical properties of nanosized heterostructures and layers produced by molecular-beam, solid-phase, and vapor-phase epitaxy on the surface of Si and Ge have been studied extensively in recent years [13][14][15][16]. The method of ion implantation has been used widely in the last few years to alter the physical properties of semiconductors in a controlled fashion.…”

Section: Introductionmentioning

confidence: 99%

Infuence of Ba atov adsorption and implanation of Ba-=SUP=-+-=/SUP=- ions on the electronic structure of single crystalline Ge

et al. 2022

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The effect of the adsorption of Ba atoms with a thickness of theta≤3-4 monolayers and the implantation of Ba+ ions with an energy of E0=0.5-2 keV on the density of states of electrons in the valence band, the parameters of the energy bands, and the emission and optical properties of Ge(111) has been studied for the first time. It is shown that during the adsorption of Ba atoms with theta=1 monolayer, the value of the thermoelectric work function φ decreases by ~ 1.9 eV, and the value of the secondary electron emission coefficient and the quantum yield of photoelectrons Y increases by 1.5-2 times. In the case of implantation of Ba+ ions with E0=0.5 keV at an irradiation dose D=6·1016 cm-2, the density of state of valence electrons and the parameters of the energy bands change sharply; the quantum yield of photoelectrons increases by a factor of 2 or more. The observed changes are explained by the formation on the surface of a thin (~25-30 Angstrem) amorphous doped layer consisting of nanoscale phases of the Ba-Ge type (~60-65 at.%). And excess (unbound) Ba and Ge atoms. In this case, the band gap Eg decreases by ~ 0.3 eV. Keywords: Ion implantation, quantum yield of photoelectrons, emission efficiency, heating, band gap, amorphous layer.

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