Effect of axial vibration on Bi₁₂SiO₂₀ crystal growth by vertical Bridgman technique

Abstract

Bi 12 SiO 20 single crystals have been grown successfully by vertical Bridgman technique. During the crystal growth process, different axial vibration amplitudes of 50 µm, 70 µm and 100 µm were applied with the same vibration frequency of 50 Hz. The effect of different axial vibration amplitudes on quality of the as-grown Bi 12 SiO 20 single crystals was discussed. The crystals have been characterized by X-ray rocking curve optical and absorption spectrum. The experimental results reveal that the axial vibration amplitude has a pronounced effect on quality of the as-grown Bi 12 SiO 20 single crystals.

Oscillatory-Driven Fluid Flow Control during Crystal Growth from the Melt

“…Several papers discuss low-frequency vibration axially applied to the ampoule in vertical Bridgman growth [62,97,120,121]. No notable effect of vibration on microstructure, compositional profile, interface shape, etc.…”

“…No notable effect of vibration on microstructure, compositional profile, interface shape, etc. Feigelson and Borshchevsky [120], who grew CdTe crystals, and Zhang et al [97], who studied the growth of Bi 12 SiO 20 , have shown that low-frequency axial vibration applied to the growth ampoule could produce a perceptible effect. Feigelson and Borshchevsky [120], who grew CdTe crystals, and Zhang et al [97], who studied the growth of Bi 12 SiO 20 , have shown that low-frequency axial vibration applied to the growth ampoule could produce a perceptible effect.…”

“…was found by Caram et al [121] or Yuan et al [62] for such a configuration of experiment. These papers demonstrated the improvement of crystal perfection by a decrease in dislocation density [120] and by control of X-ray rocking curves and short-wavelength spectral absorption edge of the grown crystals [97]. These papers demonstrated the improvement of crystal perfection by a decrease in dislocation density [120] and by control of X-ray rocking curves and short-wavelength spectral absorption edge of the grown crystals [97].…”

“…AVC-assisted crystal growth by the Bridgman method has been realized for both low melting point and high melting point dielectric and semiconductor materials [86,88,97,128,129]. In particular, the AVC-Br technique was adapted for growth of NaNO 3 , AgBr, AgBrCl, Bi 12 SiO 20 , PbTe, and CdTe crystals and the corresponding equipment for crystal growth was fabricated, including an AVC-assisted computercontrolled transparent furnace for growth of low melting point compounds [128] and a high-temperature sealed furnace for crystallization of decomposing materials [88].…”

Interfacial Mass Transfer and Morphological Instability of Oxide Crystal Growth

“…Steady forced flows are obtained on the free surface of the liquid phase driven by pure axial vibration. Based on this hinting, axial vibration is introduced into the Bi 12 SiO 20 crystal growth in our laboratory (Y. Zhang et al, 2008(Y. Zhang et al, , 2009, in order to suppress the unsteady thermocapillary or buoyancy convections. Some results are described in the following.…”