Effect of B-doping on photoluminescence properties of Si quantum dots with Ge core

For the development of photonic integrated circuits, it is mandatory to implement light sources on a Si-on-insulator (SOI) platform. However, point defects in the Si matrix and, e.g., at the Si/SiO2 interface act as nonradiative recombination channels, drastically limiting the performance of Si-based light emitters. In this Letter, we study how these defects can be healed by applying an advanced hydrogenation process, recently developed in photovoltaic research for the passivation of performance-limiting defects in Si solar cells. Upon hydrogenation, we observe an increase in the room temperature photoluminescence (PL) yield by a factor of more than three for defect-enhanced quantum dots (DEQDs) grown on float-zone Si substrates, revealing the potential of this technique to passivate detrimental defects. For DEQDs grown using SOI substrates, the PL yield enhancement even exceeds a factor of four, which we attribute to the additional passivation of defects originating from the substrate. The results for SOI substrates are of particular interest due to their relevance for future photonic integrated circuits.

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Advanced hydrogenation process applied on Ge on Si quantum dots for enhanced light emission

Spindlberger

Kim

Aberl

et al. 2021

Applied Physics Letters

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Effect of B-doping on photoluminescence properties of Si quantum dots with Ge core

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Advanced hydrogenation process applied on Ge on Si quantum dots for enhanced light emission

Advanced hydrogenation process applied on Ge on Si quantum dots for enhanced light emission

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