Shot-noise in electron-beam and EUV exposure fundamentally limits the useful sensitivity of resists. Here the exposure, amplification and deprotection of chemically amplified resists are treated as a sequence of statistical events to determine the effect of shot noise. Noise among processes is additive and a sequential Poisson process is used to illustrate the 'acid bottleneck' that occurs when less than one acid electron is generated per input electron. Lateral mixing, due to effects such as electron scattering and acid diffusion, are accounted for in a Binomial sorting model that shows the effect is simply a function of the total number of quanta reaching the voxel irrespective of their path.Electron exposure is estimated to generate on average one acid every 3.8, 21 and 36 nm along the trajectories of 5, 50 and 100 KeV electrons. Acid generation appears well correlated with energy deposition, at about 22 eV/acid required for EUV and electron exposure, or three times the DUV level. The model was validated by observing the fraction of small (24 nm and 32 nm across) contacts that cleared as a function of exposure dose at 100 KeV. Approximately 4,500 electrons were EIPBN 05 revised June 6, 2006 2 required to clear, independent of contact size. However, the slope was indicative of a process with only 50 effective events possibly owing to resist surface effects. Circular dissolution smoothing and mechanical fracture are suggested as speculative sources for the near feature size correlation length of the line-edge roughness.