Effect of balanced and unbalanced magnetron sputtering processes on the properties of SnO2 thin films

Shanker, Gauri; Prathap, P.; Srivatsa, K.M.K.; Singh, Preetam

doi:10.1016/j.cap.2019.03.016

Cited by 33 publications

(18 citation statements)

References 31 publications

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“…As a result, the excess power at 2500 and 3000 W mainly focuses on Ar*, leading to severe bombardment and destruction of films. This result is similar to some studies with high power [ 4 , 12 , 13 ]. The ratio of Sn 4+ /(Sn 2+ +Sn 4+ ) is also revealed in the Figure 5 b.…”

Section: Resultssupporting

confidence: 92%

“…This bond breaking occurs when the energy of Ar* is higher than 5.48 eV [ 40 ] as shown in the inset of Figure 2 c. As a consequence, the induced ion bombardment by too high a power will cause the serious damage to the deposited films although the saturation oxidation reaction is obtained. The deterioration of the film properties due to the strong plasma bombardment can also be found in some researches via MSD [ 4 ], and laser-assisted [ 12 ] or plasma enhanced CVD [ 13 ].…”

Section: Resultsmentioning

confidence: 99%

“…Compared to the literature using MSD [ 2 , 3 ], sol–gel [ 10 ], CVD [ 44 ], and thermal ALD [ 19 , 20 , 21 ], PEALD possess a great ability to deposit high-quality SnO 2 thin films. The refractive indices of SnO 2 thin films prepared by MSD, thermal evaporation and sol–gel process are 1.96, 2.12, and 2.07, respectively, at the wavelength of around 600 nm [ 4 , 5 , 10 ]. These values are similar to the values in the present study.…”

Section: Resultsmentioning

confidence: 99%

“…In the past few decades, tin oxide (SnO 2 ), as a promising semiconductor material, has gained significant attention due to the excellent photoelectric properties, such as high transparency, suitable band gap and band structure, and superior electron mobility. In recent works, there are abundant techniques to prepare the SnO 2 thin films, including magnetron sputter deposition (MSD) [ 1 , 2 , 3 , 4 ], thermal evaporation [ 5 ], spray pyrolysis deposition [ 6 , 7 ], sol–gel process [ 8 , 9 , 10 , 11 ], and chemical vapor deposition (CVD) [ 12 , 13 , 14 , 15 ]. However, these technologies still have many shortcomings such as poor coverage, presence of pinholes, and the uncontrolled defects.…”

Section: Introductionmentioning

confidence: 99%

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Chemical Reaction and Ion Bombardment Effects of Plasma Radicals on Optoelectrical Properties of SnO2 Thin Films via Atomic Layer Deposition

et al. 2021

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In this study, the effect of radical intensity on the deposition mechanism, optical, and electrical properties of tin oxide (SnO2) thin films is investigated. The SnO2 thin films are prepared by plasma-enhanced atomic layer deposition with different plasma power from 1000 to 3000 W. The experimental results show that plasma contains different amount of argon radicals (Ar*) and oxygen radicals (O*) with the increased power. The three deposition mechanisms are indicated by the variation of Ar* and O* intensities evidenced by optical emission spectroscopy. The adequate intensities of Ar* and O* are obtained by the power of 1500 W, inducing the highest oxygen vacancies (OV) ratio, the narrowest band gap, and the densest film structure. The refractive index and optical loss increase with the plasma power, possibly owing to the increased film density. According to the Hall effect measurement results, the improved plasma power from 1000 to 1500 W enhances the carrier concentration due to the enlargement of OV ratio, while the plasma powers higher than 1500 W further cause the removal of OV and the significant bombardment from Ar*, leading to the increase of resistivity.

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Section: Resultssupporting

confidence: 92%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Chemical Reaction and Ion Bombardment Effects of Plasma Radicals on Optoelectrical Properties of SnO2 Thin Films via Atomic Layer Deposition

et al. 2021

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“…It is known that MS is a technique for the preparation of thin film based on gas discharge; the partial pressure of introduced oxygen is critical to the sputtering state when performing RMS from the metallic target [ 24 ]. Hence, we first investigated the target voltage as a function of Ar/O 2 flow ratios at a fixed working pressure, as shown in Figure 1 a.…”

Section: Resultsmentioning

confidence: 99%

Stoichiometry Dependence of Physical and Electrochemical Properties of the SnOx Film Anodes Deposited by Pulse DC Magnetron Sputtering

Zhang

Liu

et al. 2021

Materials

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A batch of Sn oxides was fabricated by pulse direct current reactive magnetron sputtering (pDC−RMS) using different Ar/O2 flow ratios at 0.3 Pa; the influence of stoichiometry on the physical and electrochemical properties of the films was evaluated by the characterization of scanning electron microscope (SEM), X-ray diffraction (XRD), X-ray reflection (XRR), X-ray photoelectron spectroscopy (XPS) and more. The results were as follows. First, the film surface transitioned from a particle morphology (roughness of 50.0 nm) to a smooth state (roughness of 3.7 nm) when Ar/O2 flow ratios changed from 30/0 to 23/7; second, all SnOx films were in an amorphous state, some samples deposited with low O2 flow ratios (≤2 sccm) still included metallic Sn grains. Therefore, the stoichiometry of SnOx calculated by XPS spectra increased linearly from SnO0.0.08 to SnO1.71 as the O2 flow ratios increased, and the oxidation degree was further calibrated by the average valence method and SnO2 standard material. Finally, the electrochemical performance was confirmed to be improved with the increase in oxidation degree (x) in SnOx, and the SnO1.71 film deposited with Ar/O2 = 23/7 possessed the best cycle performance, reversible capacity of 396.1 mAh/g and a capacity retention ratio of 75.4% after 50 cycles at a constant current density of 44 μA/cm2.

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Impact of Ni doping on the structural, morphological, electrical and optical properties of SnO2 thin films by spray pyrolysis technique

et al. 2021

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This work deals with the impact of Ni doping on the structural, morphological, electrical and optical characteristics of SnO 2 thin films, deposited on soda-lime glass microslides (75 mm × 25 mm × 1.2 mm) at 400 °C by facile spray pyrolysis technique. The structural analysis (XRD) confirms that the prepared Ni:SnO 2 thin films belong to the tetragonal rutile structure. The preferred growth orientation along the ( 211) and ( 301) planes shifted to the (200) plane due to the Ni dopant concentration. Scanning electron microscopic analysis reveals that the grain size is effectively modified by various nickel concentration in the films. XPS measurement indicates the presence of Sn 4+ and Ni 2+ in 3.0 at.% Ni:SnO 2 thin film. The electrical studies reveal that all the films show n-type conductivity. The lowest resistivity (2.4 × 10 -3 Ω cm), high carrier concentration (1.267 × 10 20 cm −3 ) and high mobility (120 cm 2 /V s) are obtained for undoped SnO 2 thin films. A slight variation in the resistivity and carrier concentration is observed for Ni-doped SnO 2 films. The optical transmittance of 2.0 at.% Ni:SnO 2 film shows maximum transmittance than undoped SnO 2 film. The photoluminescence spectrum of undoped SnO 2 and Ni:SnO 2 thin films, excited at the wavelength of 325 nm, consists of the strong near band emission at 398 nm. The obtained result shows that 2.0 at.% Ni:SnO 2 film has high optical and electrical conductivity; this could be useful in optoelectronic and gas sensing applications. KeywordsSnO 2 • Thin films • Spray pyrolysis • XRD • XPS • Electrical and optical properties * Ramesh Babu Ramraj

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Effect of balanced and unbalanced magnetron sputtering processes on the properties of SnO2 thin films

Cited by 33 publications

References 31 publications

Chemical Reaction and Ion Bombardment Effects of Plasma Radicals on Optoelectrical Properties of SnO2 Thin Films via Atomic Layer Deposition

Chemical Reaction and Ion Bombardment Effects of Plasma Radicals on Optoelectrical Properties of SnO2 Thin Films via Atomic Layer Deposition

Stoichiometry Dependence of Physical and Electrochemical Properties of the SnOx Film Anodes Deposited by Pulse DC Magnetron Sputtering

Impact of Ni doping on the structural, morphological, electrical and optical properties of SnO2 thin films by spray pyrolysis technique

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