Effect of ballast-resistor and field-screening on electron-emission from nanodiamond emitters fabricated on micropatterned silicon pillar arrays

Abstract

Articles you may be interested inFacile fabrication of scalable patterned nickel nanocone arrays for field emission applications J. Vac. Sci. Technol. B 31, 02B104 (2013); 10.1116/1.4769349 Stabilized electron emission from silicon coated carbon nanotubes for a high-performance electron source J. Vac. Sci. Technol. B 29, 02B120 (2011); 10.1116/1.3565428Enhanced electron-field emission from nanodiamond ridge-structured emission arrays capped on micropatterned silicon pillars Electron-emission properties of silicon field-emitter arrays in gaseous ambient for charge-compensation device This paper describes the influence of ballast-resistor and field-screening on the electron field-emission behavior of nanodiamond emitter arrays fabricated on micropatterned silicon pillars. Arrays of 50 Â 50 silicon pillars capped with nanodiamond with different ballast resistances and pillar separations have been fabricated on different silicon substrates as cathode for field emission testing. The goal of this study is to evaluate the fabrication method and electron emission characteristics in this configuration for field emission applications. The electron field emission results have been compared to observe the effect of the ballast resistive behavior and array spacing of micropatterned silicon pillars on the nanodiamond field emission behaviors.