Effect of band nonparabolicity on mobility in a δ-doped semiconductor

González, L. R.; Krupski, J.; Piȩtka, M.; Szwacka, T.

doi:10.1103/physrevb.60.7768

Cited by 8 publications

(6 citation statements)

References 11 publications

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“…[26][27][28] We calculated the nonparabolic band transport mobility modifying the existing theory [26][27][28] for a parabolic band by the replacement of effective mass m * by m * ͑E͒ = ប 2 ‫ץ͓‬ 2 E / ‫ץ‬k 2 ͔ −1 and two-dimensional ͑2D͒ electron density of states g = m * / ប 2 ͑at T =0 K͒ by the nonparabolic 2D density of states g͑k͒ = ͐␦͑ k − k Ј ͒d 2 kЈ. 29 The values of m * ͑E͒ are somewhat higher than for the bulk material. This is commonly attributed to the nonparabolicity of the conduction band.…”

Section: Calculation Of the Mobilitymentioning

confidence: 99%

Optimizing the physical contribution to the sensitivity and signal to noise ratio of extraordinary magnetoresistance quantum well structures

Shao

Solin

Ram‐Mohan

et al. 2007

Journal of Applied Physics

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For applications to extraordinary magnetoresistance ͑EMR͒ quantum well sensor design, the electron areal density n 2D , the mobility , and the products n 3D 1/2 2 and n 3D 1/2 5/2 are key physical parameters to be optimized for enhanced device sensitivity and signal to noise ratio. We model the electron areal density and carrier mobility in a two-dimensional electron gas layer developed in a ␦-doped AlInSb/ InSb heterostructure. The nonparabolic band structure due to the nature of the small energy band gap of InSb is accounted for. The detailed description of the energy dispersion and the energy dependent effective mass are obtained by the k • P method of band structure calculation. The transport properties are calculated by including contributions of scattering from ionized impurities, the background neutral impurities, the deformation potential acoustic phonons, and the polar optical phonons. We calculate the dependencies of n 2D , , n 3D 1/2 2 , and n 3D 1/2 5/2 on temperature, spacer layer thickness, doping density, and the quantum well thickness. This has important implications for EMR sensor design.

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Section: Calculation Of the Mobilitymentioning

confidence: 99%

Optimizing the physical contribution to the sensitivity and signal to noise ratio of extraordinary magnetoresistance quantum well structures

Shao

Solin

Ram‐Mohan

et al. 2007

Journal of Applied Physics

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“…Un elemento importante para el conocimiento y la predicción del comportamiento de las magnitudes de transporte de carga de un sistema semiconductor, es la movilidad de los portadores, definida como la respuesta de estos a la acción del campo eléctrico aplicado, que resulta en el movimiento. Desde hace alrededor de dos décadas se comenzó el estudio de la movilidad de electrones en sistemas delta dopados (puede consultarse, por ejemplo, González 1994González ,1996González , 1999Shi 1997; como un problema de interés práctico, buscando elevar la velocidad de movimiento de los portadores en el sistema y así mejorar la respuesta de estos a campos eléctricos externos aplicados. Con esto se podría implementar su uso en dispositivos electrónicos de respuesta rápida.…”

Section: Introductionunclassified

Formalismo de cálculo de la movilidad de portadores en un pozo cuántico delta dopado δ-DQW

Rodrı́guez-Coppola

Gaggero‐Sager

2014

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Este artículo ofrece un esquema para el cálculo de la movilidad de electrones en una estructura de pozo delta dopado, a bajas temperaturas y para campos eléctricos aplicados no muy intensos. El análisis se hace para un sistema dopado tipo n, considerando una lámina de impurezas de silicio en una muestra de GaAs. Se tiene en cuanta explícitamente el carácter tridimensional de los estados electrónicos y de las magnitudes que se miden –en lugar de realizar aproximaciones en que se reduzcan las dimensiones del sistema–, lo que facilita la ejecución del cálculo. Se exponen los resultados de otros esquemas utilizados y se dan las fórmulas que se emplearán para comprobar y comparar nuestros cálculos con los reportados previamente. En la actualidad, se está en el proceso de implementación del cálculo numérico, del que se expone el algoritmo que se tiene en ejecución.

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“…At the same time V(z) is the conduction band cdge profile. The eigenfunetions and eigenvalues of (1) are given in the form where/7 = (x, y), f~ = (kx, ky) .Both h,~k and E(n, k) satisfy the 1D SchrSdinger equation [thnk = E(n, k)hnk [8], where/t is given by Eq. (1).…”

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confidence: 99%

“…where mo and m* denote tim bare and eifective electron mass respcctivcly, while E 9 is the bottom of the valence band (for detailed description of the model see [7], [8] and rcfercnces therein). V = V(z) is the conlilmmcnt potential that includes electron-electron interaction.…”

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confidence: 99%

“…The method by He [4] postulates that the electron quantum states are homogcnously distributed in the c~D k-space and a surface of constant energy is an c~D spherical shell. Provided that tile energy dispersion is parabolic r -eo ~ k 2 we obtain the expression for the density of states in (~D k-space as [4] n(e)de ~ (e -eo)a/2-1de, (8) where eo is the band-gap. This means that we ascribe to our system two parameters: a position space dimension 3 and spectral dimension a.…”

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confidence: 99%

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Effective dimensionality approach to the RKKY interaction in multilayer systems

Ba̧k¹

2002

Czech J Phys

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We consider RKKY interaction in a quasi 2D system with nonparabolic dispersion. In our paper we calculate the I~KY range function assuming the in-layer confinement via effective dimensionality approach. We show, that indirect magnetic exchange in our system can be modelled by the effective spectral dimension which equals one. PACS: 75.70Key words: RKKY interaction, magnetic multilayer.The semimagnetic semiconductors/SSCs/form a model diluted magnetic system with metallic electrical properties. High concentration of the free charge carriers causes the indirect (RKKY) spin-spin exchange interaction to be responsible for their magnetic properties [1]. Due to the applications in information storage devices the planar SSC superstructures rather than bulk systems attract tile most attention. Recent advances in nanoteclmology allow, via planar doping, fabrication of superstructures in which the 2D electron-gas/2DEG/with nonparabolic dispersion can be observed.Ahnost all theoretical studies of the indirect magnetic interaction in SSC m'e based on the restrictive assumption that the doping is uniform and the free electron dispersion is parabolic [2], [3] . Since the spatial dependence of the exchange integrals is determined by the spectra of mobile charge carriers that mediate this interaction, the problem of RKKY exchange must be considered anew. In the following, using the method of effective dimension by He [4], [5] we will derive formulae for RKKY exchange integral in a 2DEG of nouparabolic dispersion. Let us consider a semiconductor with planm" doping, often used for forming V-shaped potential wells with quasi 2DEG. When the deposition of impurities can be represented by the Dirac (i-function, it is called 5 doping [6]. The enhanced mobility of the 2D electron gas in V-shaped, (f-doped semiconducting multilayers can be described by the following Hamiltonian [7] H = --oL1V 4 --O~2V 2 q-V,where h4 (1.

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Effect of band nonparabolicity on mobility in a δ-doped semiconductor

Cited by 8 publications

References 11 publications

Optimizing the physical contribution to the sensitivity and signal to noise ratio of extraordinary magnetoresistance quantum well structures

Optimizing the physical contribution to the sensitivity and signal to noise ratio of extraordinary magnetoresistance quantum well structures

Formalismo de cálculo de la movilidad de portadores en un pozo cuántico delta dopado δ-DQW

Effective dimensionality approach to the RKKY interaction in multilayer systems

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