Effect of barrier height on the uneven carrier distribution in asymmetric multiple-quantum-well InGaAsP lasers

Hamp, Michael J.; Cassidy, Daniel T.; Robinson, B. J.; Zhao, Q.C.; Thompson, David A.; Davies, M.

doi:10.1109/68.720267

Cited by 27 publications

(8 citation statements)

References 12 publications

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“…To study gain distribution in an aluminium-quaternary material system, two InGaAs-InAlGaAs multiple width quantum wells (MWQW) structures (also referred to as asymmetric quantum well structure [4]) were grown by metal-organic vapour phase epitaxy (MOVPE), with operating wavelength centred around 1550 nm. These two structures were identical except for having inverse-configured quantum wells in their active region; in other words (for example), if one structure has three QWs configured in the sequence of decreasing size from the p-side to the n-side of the active region, the second structure has the QWs configured in the sequence of increasing size.…”

Section: Introductionmentioning

confidence: 99%

Analysis of the gain distribution across the active region of InGaAs-InAlGaAs multiple quantum well lasers

Jain

Roberts

Ironside

2005

IEE Proc., Optoelectron.

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Analysis of the gain distribution across the active region of InGaAs-InAlGaAs multiple quantum well lasers M. Jain, J. Roberts and C.N. Ironside Abstract: Spectral gain measurements for two InGaAs-InAlGaAs multiple width quantum well structures, with inverse-configured active regions, have been presented. One structure consisted of wide quantum wells near the p-side and narrow quantum wells near the n-side of the active region. The other structure consisted of narrow quantum wells near the p-side of the active region with wider quantum wells near the n-side. It is shown that, for the same operating conditions, the structure with wide quantum wells on the p-side of the active region provided a 15% broader gain spectrum in comparison to the structure with narrow quantum wells on the p-side of the active region. The analysis of the results shows non-uniform carrier distribution across the active region of the structures, where the structure with wide quantum wells near the p-side of the active region provided 65% more gain in comparison to the structure with narrow quantum wells near the p-side of the active region. The gain distribution results have been compared with that obtained for the phosphorous quaternary structures in other literature and have shown there is some evidence to suggest that the gain distribution is more uniform in aluminium quaternary than phosphorous quaternary material.

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Section: Introductionmentioning

confidence: 99%

Analysis of the gain distribution across the active region of InGaAs-InAlGaAs multiple quantum well lasers

Jain

Roberts

Ironside

2005

IEE Proc., Optoelectron.

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“…shift phenomenon partly to the increase in J th as the cavity length decreases which might blue shifts the lasing wavelength and thereby providing an impression of red shift phenomenon, as was the case with quantum well lasers [24,25]. In addition, this observation may partly be ascribed to the implicit increase in inhomogeneous broadening, as the cavity length increases, thus red shifting the lasing wavelength.…”

Section: B Comparison With the Experimental Resultsmentioning

confidence: 91%

Spectral Analysis of Quantum-Dash Lasers: Effect of Inhomogeneous Broadening of the Active-Gain Region

Khan

Schwingenschlögl

et al. 2012

IEEE J. Quantum Electron.

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Abstract-The effect of the active region inhomogeneity on the spectral characteristics of InAs/InP quantum-dash (Qdash) lasers is examined theoretically by solving the coupled set of carrier-photon rate equations. The inhomogeneity due to dash size or composition fluctuation is included in the model by considering dispersive energy states and characterized by a Gaussian envelope. In addition, the technique incorporates multilongitudinal photon modes and homogeneous broadening of the optical gain. The results predict a red shift in the central lasing wavelength of Qdash lasers on increasing the inhomogeneous broadening either explicitly or implicitly, which supports various experimental observations. The threshold current density and the lasing bandwidth are also found to increase.Index Terms-Inhomogeneous broadening, quantum-dash lasers, rate equation model.

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“…This nonuniform carrier distribution has been theoretically predicted [1][2][3] and experimentally proved. [4][5][6][7] The carrier distribution among MQWs has been found to be influenced by several factors. For example, Hamp 7,8) discovered that decreasing the height or thickness of the barriers results in a more even carrier distribution among MQWs.…”

mentioning

confidence: 99%

Influence of Separate Confinement Heterostructure Layer on Carrier Distribution in InGaAsP Laser Diodes with Nonidentical Multiple Quantum Wells

Lin¹,

Su²,

Wu³

et al. 2004

Jpn. J. Appl. Phys.

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The thickness of the separate confinement heterostructure (SCH) layer is found to have a significant influence on the carrier distribution among InGaAsP multiple quantum wells in laser diodes. When the SCH layer is 120 nm thick, the carrier distribution of the fabricated laser diodes favors quantum wells near the n-cladding layer. When the thickness of the SCH layer is reduced to 20 nm, the carrier distribution of the fabricated laser diodes favors quantum wells near the p-cladding layer. Our experiments indicate that the carrier distribution of a fabricated laser diode can be engineered using an SCH layer of appropriate thickness.

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Effect of barrier height on the uneven carrier distribution in asymmetric multiple-quantum-well InGaAsP lasers

Cited by 27 publications

References 12 publications

Analysis of the gain distribution across the active region of InGaAs-InAlGaAs multiple quantum well lasers

Analysis of the gain distribution across the active region of InGaAs-InAlGaAs multiple quantum well lasers

Spectral Analysis of Quantum-Dash Lasers: Effect of Inhomogeneous Broadening of the Active-Gain Region

Influence of Separate Confinement Heterostructure Layer on Carrier Distribution in InGaAsP Laser Diodes with Nonidentical Multiple Quantum Wells

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