Effect of barrier layer width on the optical and spectral properties of InAsP/AlGaInP quantum dot lasers

Al-Ghamdi, Mohammed S.; Almalky, Nawal Maalawy; Sait, Roaa; Gillgrass, Sara-Jayne; Karomi, Ivan B.

doi:10.1016/j.optmat.2023.114475

Cited by 2 publications

(1 citation statement)

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“…III-V materials are direct bandgap materials with high luminous efficiency, offering one of the most promising solutions [5]. Currently, InP-based and GaAsbased semiconductor lasers have made a major breakthrough [6][7][8][9]. Therefore, integrating III-V laser materials onto silicon substrates is one of the most competitive schemes to realize high-performance silicon-based light sources due to it not only having the high luminous efficiency of III-V semiconductor materials, but also being compatible with the complementary metal oxide semiconductor process of microelectronics.…”

Section: Introductionmentioning

confidence: 99%

Design of high power evanescent quantum dot distributed feedback lasers on Si

Ge,

Wang,

Liu

et al. 2024

Phys. Scr.

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Great advancements in III–V/Si epitaxy have pushed quantum dot lasers to the forefront of silicon photonics. In this work, we designed the structures of evanescent coupled quantum dot distributed feedback lasers with asymmetric gratings, which made significant improvement in on-chip output power while maintaining single-longitudinal-mode stability. The optimal /4 phase-shift position (the ratio of the grating length from the rear-end of /4 phase-shift to the total grating length) from conventional position of 0.50 to 0.64 allows the ratio of the output power at both sides of silicon waveguide to be increased from 1.0 to 5.9. Moreover, the optimal duty cycle at one side of the phase-shift from 0.50 to 0.8 allows the ratio to be increased from 1.0 to 3.7. Meanwhile, the ratio could be dramatically improved from 1.0 to 9.2 by changed the duty cycle at one side of phase-shift to 0.7 while maintaining the phase-shift position of 0.64. With those designed structures, evanescent coupled quantum dot lasers could challenge the state-of-the-art bonded quantum well lasers and may eventually become ubiquitous and affordable for future commercial production.

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Section: Introductionmentioning

confidence: 99%