Effect of basal plane bending on the atomic step morphology of the 4H–SiC substrate surface

Shao, Chen; Guo, Fenglin; Chen, Xiufang; Li, Yongming; Yu, Wancheng; Yang, Xiu; Xie, Xuejian; Xu, Xiaofeng

doi:10.1016/j.vacuum.2023.112013

Cited by 2 publications

(1 citation statement)

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“…Among the many methods for the preparation of SiC [6,7], the physical vapor transport (PVT) method is one of the most mature methods for growing bulk SiC crystals, during which a large number of dislocations are generated. Thus, the control and reduction of dislocations, especially basal plane dislocation (BPD), has been one of the most important issues [8][9][10][11][12] in improving the quality of SiC wafers. It is well known that BPD degrades SiC pn-junction diodes after long-term forward voltage operation or increases the leakage current in the blocking mode of SiC power MOSFETs and JFETs [13,14], restricting the application of SiC devices.…”

Section: Introductionmentioning

confidence: 99%

The Numerical Simulations and Experimental Study of an 8-Inch SiC Single Crystal with Reduced BPD Density

Sun,

Shang,

Lei

et al. 2024

Materials

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The basal plane dislocation (BPD) density is one of the most important defects affecting the application of SiC wafers. In this study, numerical simulations and corresponding experiments were conducted to investigate the influence of cooling processes, seed-bonding methods, and graphite crucible materials on the BPD density in an 8-inch N-type 4H-SiC single crystal grown by the physical vapor transport (PVT) method. The results showed that the BPD density could be effectively reduced by increasing the cooling rate, optimizing the seed-bonding method, and adopting a graphite crucible with a similar coefficient of thermal expansion as the SiC single crystal. The BPD density in the experiments showed that a high cooling rate reduced the BPD density from 4689 cm−2 to 2925 cm−2; optimization of the seed-bonding method decreased the BPD density to 1560 cm−2. The BPD density was further reduced to 704 cm−2 through the adoption of a graphite crucible with a smaller thermal expansion coefficient.

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