Both hexagonal zinc and wurtzite zinc oxide were deposited on p-type silicon substrate by the electrodeposition with an aqueous solution of zinc nitrate-6-hydrate near room temperature. Zinc dominates the growth at higher current density, and zinc oxide dominates the growth at higher deposition temperature. The optical emission from zinc and zinc oxide nanostructures are observed from microphotoluminescence spectra.Zinc oxide (ZnO) with wide direct band gap of 3.37 eV and high excitonic binding energy of 60 mV is a promising material for optoelectronic applications. It can perform ultraviolet (UV) emission at room temperature (RT). 1 Several reports indicate that ZnO has high photocatalytic efficiency. [2][3][4] The semiconductor-metal nanocomposites are expected to have higher potentials in catalysis, optics, and magnetic applications. [5][6][7] Recently, Zn-ZnO nanocomposites was obtained using ZnCl 2 electrolyte by the electrodeposition method at room temperature. 8 The electrodeposition method is an efficient way to prepare ZnO films at low temperature. 2 The shape and size of ZnO can be modulated by the cathodic potential, current density, 2 or adding molecular agents into the electrolyte. 3 On the other hand, the electrolyte of zinc nitrate-6-hydrate electrolyte used for Zn-ZnO nanocomposites formation can prevent Cl 2 contamination and meets the requirement of environmental protection. However, only ZnO was obtained at various deposition temperatures, 9 which could result from the lower applied current density. In this paper, a higher current density was used to prepare Zn-ZnO nanocomposites using zinc nitrate-6-hydrate electrolyte. The formation mechanism of Zn-ZnO nanocomposite and the role of Zn were also investigated.Several papers have been reported to prepare electrodeposited ZnO films at temperatures above 60°C on conductive electrodes, for example, indium tin oxide, 2,4 fluorine-doped tin oxide, 10 or n-type silicon 4 and gallium nitride 11 substrates. Boron-doped P-type (100) Si wafer with resistivity of 1-10 Ω-cm was used as the substrate in this experiment. The p-Si wafer is rarely used in electrodeposition, and we developed a simple way to deposit ZnO onto it. By this method, we can further build a structure of high quality n-ZnO on p-substrates to apply p-n junction devices. Otherwise, the heterojunction of n-ZnO and p-Si has the potential to separate the electron and hole and benefits the photocatalysis.Aluminum cathode was evaporated on the backside of the Si substrate. It was then coated with photoresist for the protection of the Al electrode during ZnO growth. A platinum sheet was used as the anode electrode. 0.1 M zinc nitrate-6-hydrate aqueous solution was used as the electrolyte. In order to investigate the function of current density (fixed at 0.1, 1, 10, and 20 mA/cm 2 ) for electrodepsited ZnO, the deposition temperature was fixed at 30°C. In order to investigate the function of deposition temperature (fixed at 30 and 65°C), the current density was fixed at 20 mA/cm 2 . T...