Effect of beam flux on radiation damage accumulation in ion-bombarded Si

Minagawa, Hideaki; Nakanishi, Shunsuke; Maekawa, M.; Kawasuso, A.; Tsuchida, H.

doi:10.56646/jjapcp.7.0_011101

Cited by 1 publication

(1 citation statement)

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“…The build-up of stable radiation damage often proceeds via complex dynamic annealing (DA) processes, involving point-defect migration and interaction, which often occurs during the ion-implantation or -irradiation step for actual device fabrication and depends on the density of collision cascades and the ion-beam flux [20,21]. Such dose-rate effects on the radiation-damage and defect-interaction dynamics in silicon have been studied by various analytical methods, including deep-level transient spectroscopy (DLTS) [22,23], charge-collection efficiency (CCE) measurements [24], Rutherford back-scattering spectroscopy (RBS) [25,26], x-ray diffraction analysis (XRD), and positronannihilation Doppler-broadening spectroscopy (PAS) [27]. However, the effect of the ion dose rate on the formation dynamics of color centers and the correlation between inhomogeneous broadening and atomic radiation disorder have rarely been studied, even though understanding these processes is essential for optimizing the formation yield, coherence, luminescence efficiency, and deterministic positioning of these defect emitters in silicon quantum photonic circuits [12].…”

Section: Introductionmentioning

confidence: 99%

Quantum Emitter Formation Dynamics and Probing of Radiation-Induced Atomic Disorder in Silicon

et al. 2023

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Near-infrared color centers in silicon are emerging candidates for on-chip integrated quantum emitters, optical-access quantum memories, and sensing. We access ensemble G-color-center formation dynamics and radiation-induced atomic disorder in silicon for a series of megaelectronvolt proton-flux conditions. The photoluminescence results reveal that the G centers are formed more efficiently by pulsed-proton irradiation than by continuous-wave proton irradiation. The enhanced transient excitations and dynamic annealing within nanoseconds allows optimization of the ratio of G-center formation to nonradiative defect accumulation. The G centers preserve narrow line widths of about 0.1 nm when they are generated by moderate pulsed-proton fluences, while the line width broadens significantly as the pulsed-proton fluence increases. This implies vacancy or interstitial clustering by overlapping collision cascades. The tracking of G-center properties for a series of irradiation conditions enables sensitive probing of atomic disorder, serving as a complementary analytical method for sensing damage accumulation. Aided by ab initio electronic structure calculations, we provide insight into the atomic disorder induced inhomogeneous broadening by introducing vacancies, silicon interstitials, and oriented strain fields in the vicinity of a G center. A vacancy leads to a tensile strain and can result in either a red shift or a blue shift of the G-center emission, depending on its position relative to the G center. Meanwhile, Si interstitials lead to compressive strain, which results in a monotonic red shift. High-flux and tunable ion pulses enable the exploration of the fundamental dynamics of radiation-induced defects as well as methods for the optimization of G-center formation and qubit synthesis for quantum information processing.

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