Effect of Bi alloying on the hole transport in the dilute bismide alloy GaAs<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow /><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math>Bi<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow /><mml:mrow><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math>

Kini, R. N.; Ptak, Aaron J.; Fluegel, B.; Reedy, R. C.; Mascarenhas, A.

doi:10.1103/physrevb.83.075307

Cited by 77 publications

(49 citation statements)

References 29 publications

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“…From previous measurements we can estimate the band gap of GaAs 1-x Bi x with x = 2.7% to be ~ 1.195 eV at 300 K and 1.24 eV at 10 K. 36 Hence the trap state responsible for the induced absorption peak at λ ~ 900 nm (E ~ 1.378 eV) at room temperature and λ ~ 885 nm (E ~ 1.4 eV) at 10 K will be resonant, most likely in the valence band as shown schematically in Fig. 4.…”

Section: Temperature and Power Dependencementioning

confidence: 86%

Resonant state due to Bi in the dilute bismide alloyGaAs1−xBix

et al. 2014

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It has been theoretically predicted that isolated Bi forms a resonant state in the valence band of the dilute bismide alloy, GaAs 1-x Bi x . We present ultrafast pump-probe reflectivity measurements of this interesting alloy system which provide experimental evidence for the resonant state. The reflectivity transients for pump/probe wavelengths λ ~ 860 -900 nm has negative amplitude which we attribute to the absorption of the probe pulse by the pump induced carriers that are localized at the Bi resonant state. Our measurements show that the lifetime of carriers localized at the resonant state is ~ 200 ps at 10K.* rajeevkini@iisertvm.ac.in 2

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Section: Temperature and Power Dependencementioning

confidence: 86%

Resonant state due to Bi in the dilute bismide alloyGaAs1−xBix

et al. 2014

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“…Therefore we attribute class (3) to Bi In substitutional atoms. In the closely related MBE grown Bi:GaAs system, Bi Ga antisites have been reported and are believed to act as compensation centers for acceptors [45]. Based on atom counting, about (0.9 ± 0.3)% of the Bi atoms of F2 in sample B are incorporated on group-III positions.…”

Section: Bi Antisitesmentioning

confidence: 99%

Incorporation of Bi atoms in InP studied at the atomic scale by cross-sectional scanning tunneling microscopy

Krammel

Roy

Tilley

et al. 2017

Phys. Rev. Materials

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We show the potential of cross-sectional scanning tunneling microscopy to address structural properties of dilute III-V bismides by investigating Bi:InP. Bismuth atoms down to the second monolayer below the {110} InP surfaces, which give rise to three classes of distinct contrast, are identified with the help of density functional theory calculations. Based on this classification, the pair-correlation function is used to quantify the ordering of Bi atoms on the long range. In a complementary short-ranged study, we investigate the Bi ordering at the atomic level. An enhanced tendency for the formation of first-nearest-neighbor Bi pairs is found. In addition, the formation of small Bi clusters is observed whose geometries appear to be related to strong first-nearest-neighbor Bi pairing. We also identify growth related crystal defects, such as In vacancies, P antisites, and Bi antisites.

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“…Two important distinctions occur between bismides and nitrides: in bismides the reduction of E g is explained by the hybridization of the valence band with occupied Bi p orbitals, and at high Bi concentrations compositional disorder plays a major role. On the one hand, the valence band hybridization in dilute bismides was inferred from transport measurements which showed a reduction of hole mobility by an order of magnitude compared to the host GaAs [19][20][21] , while the electron mobility is much less affected 19,22 . The hybridization mechanism is supported also by numerous electronic structure calculations performed at different levels: linear combination of atomic orbitals 4,23 , density functional theory (DFT) 24,25 and unfolding of DFT band structure 26 .…”

Section: Introductionmentioning

confidence: 99%

Configuration dependence of band-gap narrowing and localization in diluteGaAs1−xBixalloys

et al. 2016

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Anion substitution with bismuth (Bi) in III-V semiconductors is an effective method for experimental engineering of the band gap Eg at low Bi concentrations (≤ 2%), in particular in gallium arsenide (GaAs). The inverse Bi-concentration dependence of Eg has been found to be linear at low concentrations x and dominated by a valence band-defect level anticrossing between As and Bi occupied p levels. Predictive models for the valence band hybridization require a first-principle understanding which can be obtained by density functional theory with the main challenges being the proper description of Eg and the spin-orbit coupling. By using an efficient method to include these effects, it is shown here that at high concentrations Eg is modified mainly by a Bi-Bi p orbital interaction and by the large Bi atom-induced strain. In particular, we find that at high concentrations the Bi-Bi interactions depend strongly on model periodic cluster configurations, which is not captured by tight-binding models. Averaging over various configurations supports the defect level broadening picture. This points to the role of different atomic configurations obtained by varying the experimental growth conditions in engineering arsenide band gaps, in particular for telecommunication laser technology.

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Effect of Bi alloying on the hole transport in the dilute bismide alloy GaAs1−xBix

Cited by 77 publications

References 29 publications

Resonant state due to Bi in the dilute bismide alloyGaAs1−xBix

Resonant state due to Bi in the dilute bismide alloyGaAs1−xBix

Incorporation of Bi atoms in InP studied at the atomic scale by cross-sectional scanning tunneling microscopy

Configuration dependence of band-gap narrowing and localization in diluteGaAs1−xBixalloys

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