Effect of Bi Nanoprecipitates on the Thermoelectric Properties of Bi‐Sb‐Te/Sb₂O₃ Nanocomposites

Abstract

technology makes it possible to harvest the thermal energy from a heat source (such as motor vehicles, furnaces, or the human body) pollution-free, motion-free, and noisefree, and convert it to electrical energy. [5][6][7][8][9] In this regard, there has been an increasing need to develop thermoelectric materials with high efficiency near room temperature, for usage in TEGs to charge batteries in low-power electronic devices such as the Internet of Things sensors. [10][11][12][13] Bismuth telluride (Bi 2 Te 3 ) based alloys have been a classical thermoelectric material for near room-temperature applications, both due to their high conversion efficiency and commercial upscaling maturity. [14,15] BiSbTe alloys in particular are the most studied inorganic p-type thermoelectric materials; therefore, much effort has been devoted to enhancing their thermoelectric properties, such as reduction of the lattice thermal conductivity, [16] optimization of charge carrier concentration, [17] and hybridization with a second phase (usually a nanomaterial):, for example

Boosted Output Voltage of BiSbTe‐Based Thermoelectric Generators via Coupled Effect between Thermoelectric Carriers and Triboelectric Charges

“…At room temperature, the electrical conductivity and Seebeck coefficient were ≈520 S cm −1 and ≈205 µV K −1 , respectively, which are comparable to the corresponding values that have been reported thus far for BiSbTe. [46][47][48] As the temperature increased, the conductivity decreased to ≈271 S cm −1 at 498 K, and the Seebeck coefficient reached a maximum of ≈229 µV K −1 , after which it slowly decreased. The results clearly show the behavior of the p-type TE material (see Figure S2a, Supporting Information).…”

Characterization and Photovoltaic Effect of (Sb2O3: Metal Oxides)/ C-Si Heterojunctions

“…Hall measurements of all the prepared thin films from (Sb 2 O 3 ):(WO 3 , In 2 O 3 ) films deposited on the glass substrate are listed in Table (1). It was evident from this table that most of the thin film samples revealed a negative Hall coefficient (n-type charge carriers), that is, the Hall voltage decreased with increasing current, except the samples pure Sb 2 O 3 and Sb 2 O 3 : 5%WO 3 which have positive Hall coefficient (p-type), i.e., the hall voltage increased with increasing the current [25][26][27][28]. The concentration of the carrier n H of the prepared thin films (Sb 2 O 3 :WO 3 ) decreased in a non-regular manner with the increasing of the WO 3 content, i.e., to reduce by addition of WO 3 while it was found to grow up by increasing of In 2 O 3 to the starting material.…”