Effect of bias-enhanced nucleation on the microstructure and thermal boundary resistance of GaN/SiNx/diamond multilayer composites

Wang, Yiming; Zhou, Bing; Ma, Guoliang; Zhi, Jiaqi; Yuan, Chao; Ma, Yong; Gao, Jie; Wang, Y.S.; Yu, Shengwang

doi:10.1016/j.matchar.2023.112985

Cited by 13 publications

(4 citation statements)

References 44 publications

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“…The absolute standard deviation of the fitted thermal properties is presented in Table S3. The uncertainties of the fitted parameters were estimated by a Monte Carlo error analysis, which was routinely applied in TTR measurements. ,,, The controlled parameters, shown in Table , are assumed to have a normal distribution around its mean value with an uncertainty (2σ, 95% confidence level). The same set of TTR transients was then repeatedly fitted by the analytical model 1000 times with the controlled parameters randomly selected from their distribution, yielding new distributions of the fitted parameters.…”

Section: Resultsmentioning

confidence: 99%

“…The principle of MW-TTR is similar to that of the standard TTR technique (which uses a single probe wavelength), i.e., a low-repetition rate nanosecond laser beam serves as the pump beam to heat the sample surface and multiple continuous wavelength (CW) lasers serve as the probes, i.e., 532 nm (532-TTR), 660 nm (660-TTR), and 785 nm (785-TTR). More details on the MW-TTR system were reported in previous works. − Prior to the TTR thermal measurement, a ∼70 nm Au transducer and ∼2 nm Ti adhesion layer were deposited on the samples by electron-beam evaporation. The 532-TTR was used to measure the Au/Ti deposited samples since the Au has a large thermoreflectance coefficient (−2.6 × 10 –4 ) at 532 nm and exhibits a linear thermoreflectance relationship within a wide temperature range .…”

Section: Experimental Methodsmentioning

confidence: 99%

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Improved Thermal Performance of InGaAs/GaAs Nanomembrane HEMTs Transferred onto Various Substrates by Epitaxial Lift-Off

Gucmann,

Meng,

Chvála

et al. 2024

ACS Appl. Electron. Mater.

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High-frequency wireless communication in consumer, defense, and space applications heavily relies on the use of compound semiconductor amplifiers. Typically, the X to Ka wireless bands (∼8−40 GHz) are covered by GaN and GaAs-based devices, respectively, to the desired output power. GaAs-based high-electron mobility transistors (HEMTs) provide an unprecedented ultralownoise high-frequency operation even at cryogenic temperatures, critically important for the high-fidelity amplification of weak qubit states in quantum computing. Increased output power from GaAsbased devices while maintaining low self-heating is an important but challenging objective. In this study, we used an epitaxial lift-off (ELO) technique to transfer GaAs nanomembranes onto foreign substrates (sapphire, Si, and SiC) and analyzed the thermal properties of the van der Waals-bonded GaAs films by nanosecond transient thermoreflectance (TTR). Electrothermal simulation of a GaAs HEMT was used to predict the thermal performance of the transferred devices, and a significant decrease of ∼30% in the device thermal resistance (R th ) was observed when SiC and diamond substrates were used. Our results also predict that the on-state channel temperature rise can be further decreased by ∼29 to 41% if the GaAs/substrate interface is improved by increased thermal boundary conductance. Our study finds that the ELO-transferred GaAs HEMTs onto foreign highly thermally conductive substrates can significantly improve their thermal performance and allow for higher output while keeping the on-state temperature within the safe operating margin.

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Section: Resultsmentioning

confidence: 99%

Section: Experimental Methodsmentioning

confidence: 99%

Improved Thermal Performance of InGaAs/GaAs Nanomembrane HEMTs Transferred onto Various Substrates by Epitaxial Lift-Off

Gucmann,

Meng,

Chvála

et al. 2024

ACS Appl. Electron. Mater.

Self Cite

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“…Monte Carlo (MC) error analysis is routinely used to calculate the uncertainty of fitting parameters in TTR measurements. − The controlled parameters described in the TTR fitting section are assumed to have a normal distribution around its mean value with an uncertainty (2σ, 95% confidence level). The fitted is repeated 1000 times under the premise of slight changes in material properties and laser parameters, yielding new distributions of the fitted parameters.…”

Section: Methodsmentioning

confidence: 99%

Robust Thermal Transport across the Surface-Active Bonding SiC-on-SiC

Ma,

Xiao,

Meng

et al. 2024

ACS Appl. Mater. Interfaces

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Surface-active bonding (SAB) is a promising technique for semiconductors directly bonding. However, the interlayer of the bonding interface and the reduced layer thickness may affect thermal transport. In this study, the temperature-dependent cross-plane thermal conductivity of 4H-SiC thin films and the effective thermal boundary resistance (TBR eff ) of the bonding SiC-on-SiC are measured by the multiple-probe wavelength nanosecond transient thermoreflectance (MW-TTR). The measured temperature-dependent cross-plane thermal conductivity of the 4H-SiC thin film exhibits good quantitative agreement with calculation by density functional theory (DFT) including higher-order fourphonon (4ph) scattering, especially at high temperatures (>400 K). The theoretical calculations indicate the non-negligible importance of 4ph scattering in 4H-SiC high-temperature applications, due to the significantly increasing 4ph scattering rate at increasing temperature and strong temperature dependence of 4ph scattering. The measured nonzero but small TBR eff (2.33 + 0.43/−1.15 m 2 K/GW) at the SiC−SiC interface is analyzed with molecular dynamics (MD) simulation, indicating that a strong bonding interface with an extremely thin interlayer is formed by the SAB process. Two-dimensional finite element simulations of the experimental equivalent structures are further investigated, and the significant effects (at least 19 °C) of TBR eff on the maximum temperature (T max ) are confirmed. This study provides insight into the fundamental phonon transport and interface thermal transport mechanism in SAB SiC-on-SiC and paves the way for improved 4H-SiC efficient device manufacturing and thermal management.

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“…Wang et al [112] deposited polycrystalline diamonds on GaN using a 30-40 nm thick amorphous SiN x interlayer. At the beginning of diamond nucleation, all samples were pretreated in CH 4 /H 2 mixtures at positive bias voltage of 400 to 700 V for 60 min at approximately 700 • C. The lowest and highest effective TBRs were measured at ~26 and ~83 m 2 K/GW for the samples prepared under 700 V and 600 V bias nucleation conditions, respectively.…”

Section: Effects Of Tbr On Thermal Management In Gan-on-diamond Devicesmentioning

confidence: 99%

Effects of Thermal Boundary Resistance on Thermal Management of Gallium-Nitride-Based Semiconductor Devices: A Review

Zhan,

Xu,

Cao

et al. 2023

Micromachines

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Wide-bandgap gallium nitride (GaN)-based semiconductors offer significant advantages over traditional Si-based semiconductors in terms of high-power and high-frequency operations. As it has superior properties, such as high operating temperatures, high-frequency operation, high breakdown electric field, and enhanced radiation resistance, GaN is applied in various fields, such as power electronic devices, renewable energy systems, light-emitting diodes, and radio frequency (RF) electronic devices. For example, GaN-based high-electron-mobility transistors (HEMTs) are used widely in various applications, such as 5G cellular networks, satellite communication, and radar systems. When a current flows through the transistor channels during operation, the self-heating effect (SHE) deriving from joule heat generation causes a significant increase in the temperature. Increases in the channel temperature reduce the carrier mobility and cause a shift in the threshold voltage, resulting in significant performance degradation. Moreover, temperature increases cause substantial lifetime reductions. Accordingly, GaN-based HEMTs are operated at a low power, although they have demonstrated high RF output power potential. The SHE is expected to be even more important in future advanced technology designs, such as gate-all-around field-effect transistor (GAAFET) and three-dimensional (3D) IC architectures. Materials with high thermal conductivities, such as silicon carbide (SiC) and diamond, are good candidates as substrates for heat dissipation in GaN-based semiconductors. However, the thermal boundary resistance (TBR) of the GaN/substrate interface is a bottleneck for heat dissipation. This bottleneck should be reduced optimally to enable full employment of the high thermal conductivity of the substrates. Here, we comprehensively review the experimental and simulation studies that report TBRs in GaN-on-SiC and GaN-on-diamond devices. The effects of the growth methods, growth conditions, integration methods, and interlayer structures on the TBR are summarized. This study provides guidelines for decreasing the TBR for thermal management in the design and implementation of GaN-based semiconductor devices.

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Effect of bias-enhanced nucleation on the microstructure and thermal boundary resistance of GaN/SiNx/diamond multilayer composites

Cited by 13 publications

References 44 publications

Improved Thermal Performance of InGaAs/GaAs Nanomembrane HEMTs Transferred onto Various Substrates by Epitaxial Lift-Off

Improved Thermal Performance of InGaAs/GaAs Nanomembrane HEMTs Transferred onto Various Substrates by Epitaxial Lift-Off

Robust Thermal Transport across the Surface-Active Bonding SiC-on-SiC

Effects of Thermal Boundary Resistance on Thermal Management of Gallium-Nitride-Based Semiconductor Devices: A Review

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