Effect of Biased Field Rings to Improve Charge Removal after Heavy-Ion Strikes in Vertical Geometry β-Ga₂O₃ Rectifiers

Abstract

In this study, the response to a heavy-ion strike and the resulting single effect burnout on beta-Ga2O3 Schottky diodes with biased field rings is investigated via TCAD. The model used to simulate the device under high-reverse bias is validated using experimental current-voltage (I-V) curves. A field ring configuration for the device demonstrates an improved charge removal after simulated heavy-ion strikes. If the time scale for charge removal is faster than single event burnout, this can be an effective mechanism for reducing the effect of single ion strikes. This study explores various configurations of the termination structure and shows the impact of different design parameters in terms of a transient response after the ion strike.

Forward bias annealing of proton radiation damage in NiO/Ga2O3rectifiers

“…Recent investigations have reported single-event burnout (SEB) in Ga 2 O 3 rectifiers [32,33]. Strategies involving field management have been proposed to partially mitigate single-event effects [32][33][34][35].…”

15 MeV proton damage in NiO/β-Ga2O3vertical rectifiers

“…There have also been recent demonstrations of single event burnout (SEB) in Ga 2 O 3 rectifiers [34], while simulations show the SEB threshold voltage of conventional Ga 2 O 3 MOSFETs is lower than that of state-of-the-art AlGaN/GaN HEMTs [35,36]. Field management approaches can provide some mitigation of single event effects in Ga 2 O 3 [37]. There is clearly scope for additional studies of radiation effects in Ga 2 O 3 -based device structures.…”