2020
DOI: 10.1016/j.ceramint.2020.06.020
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Effect of bismuth doping on structural and electrical properties of 0.9(BaZr0.2Ti0.8O3)–0.1(Ba0.7Ca0.3TiO3) ceramic

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Cited by 20 publications
(4 citation statements)
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“…Our sample's s values are fewer than one, indicating that the transport mechanism is connected with localized electron hopping. [66] We notice that the value of s rises with the temperature increase, implying that the conduction process may be explained by the non-overlapping small polaron tunneling mechanism (NSPT).…”
Section: Electrical Conductivity Studymentioning
confidence: 82%
“…Our sample's s values are fewer than one, indicating that the transport mechanism is connected with localized electron hopping. [66] We notice that the value of s rises with the temperature increase, implying that the conduction process may be explained by the non-overlapping small polaron tunneling mechanism (NSPT).…”
Section: Electrical Conductivity Studymentioning
confidence: 82%
“…4,5 It is found that Ba(Zr x Ti 1Àx )O 3 (BZT), obtained by the B-site substitution of BaTiO 3 , [6][7][8][9] can effectively lessen the leakage current density and residual polarization, while increasing the breakdown field strength. [10][11][12] With the increase of Zr content, BZT can be transformed from ferroelectric material to relaxor ferroelectric material. When zirconium content increases to 35%, Ba(Zr 0.35 Ti 0.65 )O 3 (BZT35) exhibits complete relaxor ferroelectricity and typical relaxor behavior can be observed.…”
Section: Introductionmentioning
confidence: 99%
“…Among the important characteristics of this pseudo-binary ferroelectric BCZT is the existence of a triple point in the previously studied BZT-BCT diagram, located at x=0.32 where this region is considered as a separation between the rhombohedral and the tetragonal symmetry and corresponds to a high permittivity and huge electromechanical coefficients [11].…”
Section: Introductionmentioning
confidence: 99%