2015
DOI: 10.1016/j.jallcom.2015.01.177
|View full text |Cite
|
Sign up to set email alerts
|

Effect of boron-doping on the luminescent and electrical properties of a CdS/Si heterostructure based on Si nanoporous pillar array

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1

Citation Types

0
2
0

Year Published

2016
2016
2023
2023

Publication Types

Select...
6

Relationship

0
6

Authors

Journals

citations
Cited by 7 publications
(2 citation statements)
references
References 30 publications
0
2
0
Order By: Relevance
“…Similarly, B, Cu, F, Zr, Ga, K, N, and aliovalent cation‐doped CdS thin films are also studied for improved performance for CdS‐based PEC cells. [ 87–98 ]…”
Section: Cds As a Promising Materialsmentioning
confidence: 99%
“…Similarly, B, Cu, F, Zr, Ga, K, N, and aliovalent cation‐doped CdS thin films are also studied for improved performance for CdS‐based PEC cells. [ 87–98 ]…”
Section: Cds As a Promising Materialsmentioning
confidence: 99%
“…Semiconductor materials find widespread practical applications across various fields due to their unique electrical and optical properties [1][2][3][4]. Among the diverse range of semiconductor materials, II-VI group semiconductors such as cadmium sulfide (CdS), cadmium telluride (CdTe), zinc selenide (ZnSe), and zinc sulfide (ZnS) have emerged as leading candidates for applications such as solar cells, light-emitting diodes, lasers, thin film transistors, piezoelectric devices, infrared detectors, and light detectors.…”
Section: Introductionmentioning
confidence: 99%