Effect of Boundary Conditions on the Interface Tamm's States

Abstract

The interface Tamm's states of heterojunctions formed from narrow-gap semiconductors are intensively studied. Trying to elucidate the effect of the boundary conditions on the interface states, in this work we compare results of theoretical calculations performed for two different cases of the positiondependent band-gap junction: when it is continuous and when it is a set of step junctions. It is shown that there is a direct analogy between these two cases. This analogy concerns not only the value of the energy of the so-called excited interface states but also the form of their wave functions.