Effect of Bridging Groups of Precursors on Modulus Improvement in Plasma-Enhanced Copolymerized Low-k Films

Abstract

The mechanical strength of an organic silica low dielectric constant film was enhanced by introducing a reinforcement monomer into a matrix monomer under plasma polymerization deposition. The modulus improvement mechanism was investigated by using pyrolysis gas chromatography and mass spectrometry. Incorporation of a reinforcement monomer in the film matrix through copolymerization reactions was confirmed. Compositional analysis of the films showed that the extent of reinforcement was associated with the copolymerization ratio and the monomer content in the film. It is also found that the modulus enhancement depends on the content of three-dimensional aromatic bridged structure.

Preparation and characterization of low-dielectric-constant F-doped SiOCN films by PECVD

“…When the C 2 F 6 flow rate increases from 450 m to 750 sccm, the deposition rate increases from 8.7 to 21.7 nm/min, while the k value varies form 3.1 to 2.6. It indicates that the dielectric constant of SiOCNF film can be reduced by increasing the flow rate of C 2 F 6 , likely leading to incorporation of more C and F concentration in the deposited film [4,5,6] . [7,8,9,10] .…”