Effect of buffer thickness on the properties of Al-doped ZnO thin films prepared by DC magnetron sputtering

Zhu, Ke; Wang, Haibin; Xiao, Faxin; Xu, Feng

doi:10.1007/s10854-017-6415-7

Cited by 5 publications

(6 citation statements)

References 20 publications

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Section: Composition and Structural Propertiesmentioning

confidence: 99%

“…Poor structural quality is exhibited by the films of 30 nm and 50 nm, as indicated by the low counts in the diffraction peaks. From a thickness of 80 nm, all the samples show diffraction peaks in the (002) plane, characteristic of the hexagonal wurtzite structure21,22 , with preferential orientation in the c-axis perpendicular to the substrate21,23 .Under the same data acquisition conditions, the intensity of the peak associated with the (002) orientation increases with increasing pressure, and other peaks associated with the (101), (102) and (103) planes appear, indicating that growth also occurs in other crystallographic planes.The strain in the initial stages of growth tends to be greater because of the strong film-substrate interaction, typical of island growth. When the islands begin to coalesce, the strain tends to be released.AZO crystallites deposited by the described method at a lower deposition temperature are larger than those of ZnO reported in the literature24 .The diffraction angle of the (002) plane increases from 33.89° to 34.15°, indicating that as the film thickness increases, the residual stress decreases.…”

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confidence: 99%

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Growth Evolution of AZO thin Films Deposited by Magnetron Sputtering at Room Temperature

et al. 2021

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Thin AZO films were grown by RF magnetron sputtering for different deposition times in argon plasmas. Optical, structural, and morphological properties, together with elemental composition, were studied and correlated with the observed effects on the electrical properties and compared with two models of mobility scattering (ionized impurities and grain boundaries). The results suggest that the carrier density in the studied case is limited to below 15% owing to the low ionization efficiency caused by the formation of neutral impurities as homologous phases. While the spread in the mobility during the initial stages of film growth is strongly influenced by grain boundaries, in thicker films the limitation on ion efficiency becomes more significant.

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Section: Composition and Structural Propertiesmentioning

confidence: 99%

mentioning

confidence: 99%

Growth Evolution of AZO thin Films Deposited by Magnetron Sputtering at Room Temperature

et al. 2021

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“…At present, there are many kinds of photocatalysts, including semiconductor metal oxides and sulfides, such as TiO 2 , ZnO, CdS, ZnS, and so forth [1][2][3][4][5]. Among them, TiO 2 has received extensive attention from scholars because of its low cost, good photocatalytic activity and non-toxicity.…”

Section: Introductionmentioning

confidence: 99%

Preparation and Photocatalytic Properties of CdS/F–TiO2 Composites

Zhang

You

et al. 2019

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F–TiO2 was prepared by a simple precipitation method using titanium sulfate as the titanium source, hydrogen fluoride as the fluorine source and ammonia as the precipitant. CdS/F–TiO2 composites were prepared by hydrothermal synthesis of CdS and F–TiO2. The surface morphology, crystal phase composition, ultraviolet absorption band, fluorescence intensity, element composition, valence state, specific surface and pore structure of the samples were characterized by using field emission scanning electron microscopy (FESEM), X-ray diffraction (XRD), ultraviolet visible absorption spectrum (UV-Vis-Abs), Molecular fluorescence spectrophotometer (PL) and X-Ray photoelectron spectroscopy (XPS) and Surface area analyzer (BET), respectively. The effects of the dosage of the photocatalyst, pH value, the concentration of methyl orange and the addition of H2O2 on the photocatalytic performance were investigated with methyl orange solution as the target degradation product. The results showed the optimum condition for photodegradation of methyl orange by 1% CdS/F–TiO2 is that the pH value, the solid-liquid ratio, the concentration of methyl orange and the dosage of H2O2 is 2, 2 g/L, 10 mg/L and 3%, respectively. Under the same conditions, the degradation rate of methyl orange by 1% CdS/F–TiO2 was 93.36% when 300 W metal halide lamp was irradiated for 20 minutes, which was significantly higher than that of F–TiO2. CdS has a significant effect on the morphology, crystallinity, grain size and the compound probability of electrons and holes after the F–TiO2 modification. The composite causes a significant red shift at the edge of the F–TiO2 light absorption band. The photocatalytic degradation of methyl orange by 1% CdS/F–TiO2 follows the Langmuir-Hinshelwood first-order kinetic model.

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“…Numerous studies have been conducted so far to overcome these problems with the goal of substituting ITO with metal-doped ZnO. To further lower the resistivity and flatten the resistivity spatial distribution, it is reported that the following are effective: addition of hydrogen gas, 13,14) substrate heating during film formation, 15,16) post annealing, 17) formation of an intermediate buffer layer between thin film and substrate, [18][19][20] off-axis arrangement of substrate, 21) use of facing targets, 22,23) superposition of DC and RF, 16,[24][25][26] utilization of inductively coupled plasma assist, [27][28][29] installation of mesh grid between target and substrate, 30) etc.…”

Section: Introductionmentioning

confidence: 99%

Reduction and uniformization of the resistivity of Ga-doped ZnO by combining short-gap magnetron sputtering and buffer layer

Matsuda¹,

Matsuo²,

Sakamoto³

et al. 2019

Jpn. J. Appl. Phys.

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To obtain low-resistance metal-doped ZnO film with a uniform resistivity distribution, a combination of short-gap magnetron sputtering and a buffer layer is proposed. The influence of the distance between the target and the substrate (T-S distance) on properties such as the thickness, resistivity, carrier density, carrier mobility, and crystallinity of Ga-doped ZnO thin films deposited by conventional RF planar magnetron sputtering was investigated. As the T-S distance decreased, the film resistivity remarkably decreased. Although spontaneous annealing greatly reduced the film's resistivity, the opposing part of the target erosion area showed high resistivity, possibly due to the bombardment of oxygen negative ions. The spatial uniformity in resistivity was greatly improved using a glass substrate on which a solid-phase-crystallized thin buffer layer was formed.

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Effect of buffer thickness on the properties of Al-doped ZnO thin films prepared by DC magnetron sputtering

Cited by 5 publications

References 20 publications

Growth Evolution of AZO thin Films Deposited by Magnetron Sputtering at Room Temperature

Growth Evolution of AZO thin Films Deposited by Magnetron Sputtering at Room Temperature

Preparation and Photocatalytic Properties of CdS/F–TiO2 Composites

Reduction and uniformization of the resistivity of Ga-doped ZnO by combining short-gap magnetron sputtering and buffer layer

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