Effect of c-axis inclination angle on the properties of ZnO/Zn1−xCdxO/ZnO quantum wells

Shtepliuk, Ivan; Khranovskyy, Volodymyr; Yakimova, Rositsa

doi:10.1016/j.tsf.2016.02.007

Cited by 8 publications

(1 citation statement)

References 45 publications

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“…Numerous existing theoretical and experimental studies were mainly triggered by its unique optical properties, especially large exciton binding energy (60 meV) at room temperature (RT), which is even higher than that of GaN. This makes ZnO an excellent candidate for the next-generation ZnO-based quantum well light-emitting devices [ 9 , 10 , 11 , 12 , 13 ]. Naturally, the ultimate development of ZnO-based technologies requires the production of device-quality ZnO layers with tunable band gap energy, controllable doping level, low defect density, minimized strain, and high optical performance (good transparency and strong light emission).…”

Section: Introductionmentioning

confidence: 99%

Temperature-Dependent Photoluminescence of ZnO Thin Films Grown on Off-Axis SiC Substrates by APMOCVD

et al. 2021

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The growth of high-quality ZnO layers with optical properties congruent to those of bulk ZnO is still a great challenge. Here, for the first time, we systematically study the morphology and optical properties of ZnO layers grown on SiC substrates with off-cut angles ranging from 0° to 8° by using the atmospheric pressure meta–organic chemical vapor deposition (APMOCVD) technique. Morphology analysis revealed that the formation of the ZnO films on vicinal surfaces with small off-axis angles (1.4°–3.5°) follows the mixed growth mode: from one side, ZnO nucleation still occurs on wide (0001) terraces, but from another side, step-flow growth becomes more apparent with the off-cut angle increasing. We show for the first time that the off-cut angle of 8° provides conditions for step-flow growth of ZnO, resulting in highly improved growth morphology, respectively structural quality. Temperature-dependent photoluminescence (PL) measurements showed a strong dependence of the excitonic emission on the off-cut angle. The dependences of peak parameters for bound exciton and free exciton emissions on temperature were analyzed. The present results provide a correlation between the structural and optical properties of ZnO on vicinal surfaces and can be utilized for controllable ZnO heteroepitaxy on SiC toward device-quality ZnO epitaxial layers with potential applications in nano-optoelectronics.

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Section: Introductionmentioning

confidence: 99%

Temperature-Dependent Photoluminescence of ZnO Thin Films Grown on Off-Axis SiC Substrates by APMOCVD

et al. 2021

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Electronic band energy of a bent ZnO piezoelectric semiconductor nanowire

Yang

Pan

2020

Appl. Math. Mech.-Engl. Ed.

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Electric potential and energy band in ZnO nanofiber tuned by local mechanical loading

Fan

Chen

2021

Appl. Math. Mech.-Engl. Ed.

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Recent success in strain engineering has triggered tremendous interest in its study and potential applications in nanodevice design. In this paper, we establish a coupled piezoelectric/semiconducting model for a wurtzite structure ZnO nanofiber under the local mechanical loading. The energy band structure tuned by the local mechanical loading and local length is calculated via an eight-band k · p method, which includes the coupling of valance and conduction bands. Poisson’s effect on the distribution of electric potential inversely depends on the local mechanical loading. Numerical results reveal that both the applied local mechanical loading and the local length exhibit obvious tuning effects on the electric potential and energy band. The band gap at band edges varies linearly with the applied loading. Changing the local length shifts the energy band which is far away from the band edges. This study will be useful in the electronic and optical enhancement of semiconductor devices.

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Effect of c-axis inclination angle on the properties of ZnO/Zn1−xCdxO/ZnO quantum wells

Cited by 8 publications

References 45 publications

Temperature-Dependent Photoluminescence of ZnO Thin Films Grown on Off-Axis SiC Substrates by APMOCVD

Temperature-Dependent Photoluminescence of ZnO Thin Films Grown on Off-Axis SiC Substrates by APMOCVD

Electronic band energy of a bent ZnO piezoelectric semiconductor nanowire

Electric potential and energy band in ZnO nanofiber tuned by local mechanical loading

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