Effect of Capped Cu Layer on Protrusion Behaviors of Through Silicon via Copper (TSV-Cu) Under Double Annealing Conditions: Comparative Study

Zhang, M.; Qin, Fei; Chen, S.; Dai, Yanwei; Jin, Yang; Chen, Pei; An, Tong; Gong, Yanpeng

doi:10.1109/tdmr.2022.3232128

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Cited by 6 publications

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“…In order to meet the requirements of modern circuit system functions, the concept of TSV vertical switching has been proposed and simulated [10,11,12,13]. During the fabrication of the TSV, thermal stress is generated around the TSV after thermal annealing due to the different thermal expansion coefficients of various materials [14,15,16,17,18,19]. Mobility is a function of stress, and even if stress does not have a destructive effect on the structure, it can affect the mobility of the substrate device, which in turn affects the overall performance [20,21,22,23].…”

Section: Introductionmentioning

confidence: 99%

Effect of annealing residual stress on mobility of TSV vertical switch

Wang,

Ren,

Yin

et al. 2024

IEICE Electron. Express

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The effect of internal radial stress generated during the annealing process on the mobility of through-silicon via (TSV) vertical switch are analyzed in detail, by employing finite element software ANSYS and orthogonal experimental design method. The results show that, the TSV diameter has the largest effect on the mobility of the TSV vertical switch, while the equilateral triangle array produces the smallest effect of stress at the same distance.

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