Effect of carbon additive on increases in the growth rate of 2in GaN single crystals in the Na flux method

Kawamura, Fumio; Morishita, Masao; Tanpo, Masaki; Imade, Mamoru; Yoshimura, Masashi; Kimura, Yasuo; Mori, Yusuke; Sasaki, T.

doi:10.1016/j.jcrysgro.2008.06.008

Cited by 137 publications

(146 citation statements)

References 25 publications

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“…Another advantage of this liquid epitaxial method is its ability to reduce some structural defect density, consistent with reports for other material systems such as SiC. A decrease of dislocation density from 10 8 cm À2 in the seed to 10 4 cm À2 in the regrown material was reported and explained in terms of a change in the dominating growth mode from vertical in the seed to lateral in the Na-flux solution growth [33].…”

Section: Solution Growth At Lower Pressure Lower Temperaturessupporting

confidence: 84%

GaN Substrates for III-Nitride Devices

2010

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| Despite the rapid commercialization of III-nitride semiconductor devices for applications in visible and ultraviolet optoelectronics and in high-power and high-frequency electronics, their full potential is limited by two primary obstacles: i) a high defect density and biaxial strain due to the heteroepitaxial growth on foreign substrates, which result in lower performance and shortened device lifetime, and ii) a strong built-in electric field due to spontaneous and piezoelectric polarization in the wurtzite structures along the well-established [0001] growth direction for nitrides. Recent advances in the research, development, and commercial production of native GaN substrates with low defect density and high structural and optical quality have opened opportunities to overcome both of these obstacles and have led to significant progress in the development of several optoelectronic and high-power devices. In this paper, the recent achievements in bulk GaN growth development using different approaches are reviewed; comparison of the bulk materials grown in different directions is made; and the current achievements in device performance utilizing native GaN substrate material are summarized.

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Section: Solution Growth At Lower Pressure Lower Temperaturessupporting

confidence: 84%

GaN Substrates for III-Nitride Devices

2010

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“…9 In addition, the properties of carbon impurities in GaN growth have been intensively studied. [10][11][12] The common route to dope GaN with carbon in chemical vapor deposition (CVD) is to utilize the carbon atoms on the gallium precursor, typically trimethylgallium (TMG) or triethylgallium (TEG). Carbon incorporation from the Ga precursors can be controlled by process parameters such as temperature, pressure, and flow rate of the Ga precursor; more carbon is incorporated when decreasing the temperature or when increasing the TMG/TEG flow.…”

Section: Introductionmentioning

confidence: 99%

Precursors for carbon doping of GaN in chemical vapor deposition

Danielsson

Pedersen

et al. 2015

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Articles you may be interested in 3 ] have been investigated as precursors for intentional carbon doping of (0001) GaN in chemical vapor deposition. The carbon precursors were studied by comparing the efficiency of carbon incorporation in GaN together with their influence on morphology and structural quality of carbon doped GaN. The unsaturated hydrocarbons C 2 H 4 and C 2 H 2 were found to be more suitable for carbon doping than the saturated ones, with higher carbon incorporation efficiency and a reduced effect on the quality of the GaN epitaxial layers. The results indicate that the C 2 H 2 molecule as a direct precursor, or formed by the gas phase chemistry, is a key species for carbon doping without degrading the GaN quality; however, the CH 3 species should be avoided in the carbon doping chemistry.

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“…The problem arose from the faster growth of the polycrystalline GaN crystal nucleated spontaneously, compared to the GaN crystal grown on seed substrate located on the bottom of solution. We found that the doping of carbon into the solution can greatly suppress the spontaneous nucleation on any area other than the substrate [24]. The Secondary Ion Mass Spectroscopy measurement revealed that the carbon additive is not incorporated in the grown crystal.…”

Section: Introductionmentioning

confidence: 91%

“…For example, we have successfully developed the solution stirring techniques to make large high-quality protein and oxide crystals. For controlling the nucleation process of GaN crystals in Na flux method, we have developed liquid phase epitaxy (LPE) method for restricting the nucleation site on the seed [14][15], and doping of carbon into solution for suppressing spontaneous nucleation on any area other than the seed [24]. For controlling the growth process, we have applied this solution stirring technique to the Na flux method and found that the similar effects obtained for protein and oxide crystals could be also obtained for GaN crystal growth [21].…”

Section: Introductionmentioning

confidence: 99%

Growth of bulk GaN crystals by Na flux method

Mori

Kimura

Imade

et al. 2011

Phys. Status Solidi C

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High‐quality and low cost bulk crystals are needed in the field of group III nitride semiconductors in order to develop optical and electrical devices. There are two approaches for the growth of bulk GaN crystal by the Na flux method. One is to grow thick GaN crystal on a seed GaN crystal grown by vapour phase method. The other one is to grow GaN crystal on the seed GaN crystal obtained by spontaneous nucleation. The both methods show advantages and disadvantages, respectively. We also present the effects of the flux composition on the growth habit and the growth rate for fabrication of boule‐shape bulk GaN crystals. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Effect of carbon additive on increases in the growth rate of 2in GaN single crystals in the Na flux method

Cited by 137 publications

References 25 publications

GaN Substrates for III-Nitride Devices

GaN Substrates for III-Nitride Devices

Precursors for carbon doping of GaN in chemical vapor deposition

Growth of bulk GaN crystals by Na flux method

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