Effect of carbon sources on silicon carbon nitride films growth in an electron cyclotron resonance plasma chemical vapor deposition reactor

Wu, Jih‐Jen; Chen, K. H.; Wen, Cheng‐Yen; Chen, L. C.; Guo, Xiaojing; Lo, Hao-Wen; Lin, Shun-Tang; Yu, Yang; Wang, C. W.; Lin, E. K.

doi:10.1016/s0925-9635(99)00218-6

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Cited by 15 publications

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“…all the samples, but accurate determination of the composition of the nanorods by this method is not possible at present time. For the ECR-PECVD deposited buffer layers, Rutherford back-scattering spectroscopy (RBS) was employed to determine their compositions [37,38]. It was found that all the SiC x N y ®lms exhibited an N content very close to 57 at.% while the [C]/[Si] ratio varied from 0 to 1, depending on the process gas compositions.…”

Section: Resultsmentioning

confidence: 99%