Journal of the Korean Vacuum Society
 2008
DOI: 10.5757/jkvs.2008.17.4.359
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Effect of Carrier Confinement and Optical Properties of Two-dimensional Electrons in Al0.3Ga0.7N/GaN and Al0.3Ga0.7N/GaN/Al0.15Ga0.85N/GaN Heterostructures

Ho-Sang Kwack1,
K.S. Lee2,
H.E. Cho3
et al.
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