2022
DOI: 10.3390/cryst12040479
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Effect of Carrier Gas Flow Rate on the Morphology and Luminescence Properties of CsPbBr3 Microcrystals

Abstract: All-inorganic halide perovskites, especially lead perovskite microcrystals, have attracted more and more attention because of their excellent photoelectric properties and chemical stability. Herein, high quality CsPbBr3 microcrystals with three different stable morphologies, namely microplate, frustum of a square pyramid and pyramid, were synthesized by the chemical vapor deposition (CVD) method through altering the flow rate of a carrier gas and were comparatively studied in structure and optical property. Th… Show more

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Cited by 3 publications
(4 citation statements)
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“…Figure a shows the XPS spectra of Cs 3d, Pb 4f, and Br 3d for CsPbBr 3 in the CsPbBr 3 /MoS 2 layer. All peaks were consistent with previously reported results for CsPbBr 3 . , No chemical interaction between MoS 2 and CsPbBr 3 was expected owing to the absence of shift in the XPS peaks related to CsPbBr 3 as well as the absence of new peaks. , Figure b shows the XPS spectra of Mo 3d, S 2p, and C 1s for the MoS 2 (top row) and CsPbBr 3 /MoS 2 (bottom row) layers, respectively; the vertical dashed lines are reference lines for evaluating a relative peak shift in MoS 2 . Compared with MoS 2 , we observed upshifts by ∼0.25 eV for both Mo 3d and S 2p in CsPbBr 3 /MoS 2 , whereas C 1s showed no significant change. This indicates that the E F value of the MoS 2 layer upshifted toward the conduction band ( E C ), which can be attributed to the n-doping of the MoS 2 layer via CsPbBr 3 hybridization. , These results are consistent with the n-doping trend observed in the electrical and optical characterization of the CsPbBr 3 /MoS 2 FETs.…”
supporting
confidence: 89%
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“…Figure a shows the XPS spectra of Cs 3d, Pb 4f, and Br 3d for CsPbBr 3 in the CsPbBr 3 /MoS 2 layer. All peaks were consistent with previously reported results for CsPbBr 3 . , No chemical interaction between MoS 2 and CsPbBr 3 was expected owing to the absence of shift in the XPS peaks related to CsPbBr 3 as well as the absence of new peaks. , Figure b shows the XPS spectra of Mo 3d, S 2p, and C 1s for the MoS 2 (top row) and CsPbBr 3 /MoS 2 (bottom row) layers, respectively; the vertical dashed lines are reference lines for evaluating a relative peak shift in MoS 2 . Compared with MoS 2 , we observed upshifts by ∼0.25 eV for both Mo 3d and S 2p in CsPbBr 3 /MoS 2 , whereas C 1s showed no significant change. This indicates that the E F value of the MoS 2 layer upshifted toward the conduction band ( E C ), which can be attributed to the n-doping of the MoS 2 layer via CsPbBr 3 hybridization. , These results are consistent with the n-doping trend observed in the electrical and optical characterization of the CsPbBr 3 /MoS 2 FETs.…”
supporting
confidence: 89%
“…All peaks were consistent with previously reported results for CsPbBr 3 . 47,48 No chemical interaction between MoS 2 and CsPbBr 3 was expected owing to the absence of shift in the XPS peaks related to CsPbBr 3 as well as the absence of new peaks. 47,48 Figure 4b shows the XPS spectra of Mo 3d, S 2p, and C 1s for the MoS 2 (top row) and CsPbBr 3 /MoS 2 (bottom row) layers, respectively; the vertical dashed lines are reference lines for evaluating a relative peak shift in MoS 2 .…”
mentioning
confidence: 99%
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“…Figure 3 a shows the Cs 3d 3/2 (738.04 eV) and Cs 3d 5/2 (724.01 eV) peaks witnessing the presence of Cs + [ 35 ]. There is no shift upon the incorporation of the adhesion promoter and parylene type C coating.…”
Section: Resultsmentioning
confidence: 99%