Effect of Catalyst Morphology on the Quality of CVD Grown Graphene

Hsieh, Ya‐Ping; Wang, Yiwen; Ting, Chu-Chi; Wang, Hsiang‐Chen; Chen, Kuang-Yao; Yang, Chang-Chung

doi:10.1155/2013/393724

Cited by 18 publications

(11 citation statements)

References 15 publications

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“…Hydrogen also acts as an etching agent to eliminate defective sites and facilitates the growth of large-scale graphene [7]. Surface pretreatment can eliminate high protrusions and produce a smooth surface of the substrate and restore the defects of the substrate [8,9]. Surface pretreatment can also help dissolve the native oxide and passivate the substrate surface during graphitization [10].…”

Section: Introductionmentioning

confidence: 99%

Temperature and Copper Concentration Effects on the Formation of Graphene-Encapsulated Copper Nanoparticles from Kraft Lignin

et al. 2017

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The effects of temperature and copper catalyst concentration on the formation of graphene-encapsulated copper nanoparticles (GECNs) were investigated by means of X-ray diffraction, Fourier transform infrared spectroscopy-attenuated total reflectance, and transmission electron microscopy. Results showed that higher amounts of copper atoms facilitated the growth of more graphene islands and formed smaller size GECNs. A copper catalyst facilitated the decomposition of lignin at the lowest temperature studied (600 °C). Increasing the temperature up to 1000 °C retarded the degradation process, while assisting the reconfiguration of the defective sites of the graphene layers, thus producing higher-quality GECNs.

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Section: Introductionmentioning

confidence: 99%

Temperature and Copper Concentration Effects on the Formation of Graphene-Encapsulated Copper Nanoparticles from Kraft Lignin

et al. 2017

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“…Raman mapping, which is the best method for analyzing the number of layers, is used to analyze the image [47][48][49][50]. The results reveal that MoS 2 has two peaks at 380 and 400 cm −1 , respectively.…”

Section: Raman Spectrum Analysis Resultsmentioning

confidence: 99%

Growth Mechanism of Periodic-Structured MoS2 by Transmission Electron Microscopy

et al. 2021

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Molybdenum disulfide (MoS2) was grown on a laser-processed periodic-hole sapphire substrate through chemical vapor deposition. The main purpose was to investigate the mechanism of MoS2 growth in substrate with a periodic structure. By controlling the amount and position of the precursor, adjusting the growth temperature and time, and setting the flow rate of argon gas, MoS2 grew in the region of the periodic holes. A series of various growth layer analyses of MoS2 were then confirmed by Raman spectroscopy, photoluminescence spectroscopy, and atomic force microscopy. Finally, the growth mechanism was studied by transmission electron microscopy (TEM). The experimental results show that in the appropriate environment, MoS2 can be successfully grown on substrate with periodic holes, and the number of growth layers can be determined through measurements. By observing the growth mechanism, composition analysis, and selected area electron diffraction diagram by TEM, we comprehensively understand the growth phenomenon. The results of this research can serve as a reference for the large-scale periodic growth of MoS2. The production of periodic structures by laser drilling is advantageous, as it is relatively simpler than other methods.

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“…Most importantly, the large-scale application of graphene is an urgent development for industrial developments and integrations. The chemical vapor deposition (CVD) growth of graphene has revealed great potential due to the largearea, cost-effective, and industrial-like schemes such as optical lithography to fabricate one-dimensional graphene quantum constrictions for electronic coherent devices [5][6][7][8][9][10]. Recent reports underscore the importance of interference effects due to the intrinsic nanoscale grain boundaries and merged domains within the CVD graphene [11,12].…”

Section: Introductionmentioning

confidence: 99%

High Current-Induced Electron Redistribution in a CVD-Grown Graphene Wide Constriction

Chuang

Woo

Liu

et al. 2016

Journal of Nanomaterials

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Investigating the charge transport behavior in one-dimensional quantum confined system such as the localized states and interference effects due to the nanoscale grain boundaries and merged domains in wide chemical vapor deposition graphene constriction is highly desirable since it would help to realize industrial graphene-based electronic device applications. Our data suggests a crossover from interference coherent transport to carriers flushing into grain boundaries and merged domains when increasing the current. Moreover, many-body fermionic carriers with disordered system in our case can be statistically described by mean-field Gross-Pitaevskii equation via a single wave function by means of the quantum hydrodynamic approximation. The novel numerical simulation method supports the experimental results and suggests that the extreme high barrier potential regions on graphene from the grain boundaries and merged domains can be strongly affected by additional hot charges. Such interesting results could pave the way for quantum transport device by supplying additional hot current to flood into the grain boundaries and merged domains in one-dimensional quantum confined CVD graphene, a great advantage for developing graphene-based coherent electronic devices.

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Effect of Catalyst Morphology on the Quality of CVD Grown Graphene

Cited by 18 publications

References 15 publications

Temperature and Copper Concentration Effects on the Formation of Graphene-Encapsulated Copper Nanoparticles from Kraft Lignin

Temperature and Copper Concentration Effects on the Formation of Graphene-Encapsulated Copper Nanoparticles from Kraft Lignin

Growth Mechanism of Periodic-Structured MoS2 by Transmission Electron Microscopy

High Current-Induced Electron Redistribution in a CVD-Grown Graphene Wide Constriction

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