Effect of cations on the improvement of material removal rate of silicon wafer in chemical mechanical polishing

Xie, Wenxiang; Zhang, Zhenyu; Chen, Xin; Yu, Shiqiang; Shi, Chunjing; Zhou, Hongxiu; Wen, Wei

doi:10.1016/j.colsurfa.2023.131576

Cited by 10 publications

(2 citation statements)

References 30 publications

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“…Song et al have reported that the strong oxidant H 2 O 2 can improve the MRR of Si CMP, with the most significant effect at a concentration of 1 vol% [ 15 ]. Xie et al pointed out that cations such as Na + , K + , NH 4 + , etc., are able to increase the MRR of Si CMP [ 16 , 17 ] while allowing the slurry to maintain good dispersion. Additionally, sorbitol, gluconic acid, citric acid, and ammonium citrate were found to be effective in improving the removal rate of Si CMP, particularly ammonium citrate [ 18 ].…”

Section: Introductionmentioning

confidence: 99%

Mechanism Exploration of the Effect of Polyamines on the Polishing Rate of Silicon Chemical Mechanical Polishing: A Study Combining Simulations and Experiments

Lin,

Zhu,

Huang

et al. 2024

Nanomaterials

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Polyamines have become important chemical components used in several integrated circuit manufacturing processes, such as etching, chemical mechanical polishing (CMP), and cleaning. Recently, researchers pointed out that polyamines can be excellent enhancers in promoting the material removal rate (MRR) of Si CMP, but the interaction mechanism between the polyamines and the silicon surface has not been clarified. Here, the micro-interaction mechanisms of polyamines, including ethylenediamine (EDA), diethylenetriamine (DETA), triethylenetetramine (TETA), tetraethylenepentamine (TEPA), and pentaethylenehexamine (PEHA), with the Si(1, 0, 0) surface were investigated through molecular dynamics (MD) simulations using the ReaxFF reactive force field. Polyamines can adsorb onto the Si(1, 0, 0) surface, and the adsorption rate first accelerates and then tends to stabilize with the increase in the quantity of -CH2CH2NH-. The close connection between the adsorption properties of polyamines and the polishing rate has been confirmed by CMP experiments on silicon wafers. A comprehensive bond analysis indicates that the adsorption of polyamines can stretch surface Si–Si bonds, which facilitates subsequent material removal by abrasive mechanical wear. This work reveals the adsorption mechanism of polyamines onto the silicon substrate and the understanding of the MRR enhancement in silicon CMP, which provides guidance for the design of CMP slurry.

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Section: Introductionmentioning

confidence: 99%

Mechanism Exploration of the Effect of Polyamines on the Polishing Rate of Silicon Chemical Mechanical Polishing: A Study Combining Simulations and Experiments

Lin,

Zhu,

Huang

et al. 2024

Nanomaterials

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“…Then, deposit SiO2 and smooth the surface with chemical mechanical polishing (CMP). The surface roughness of the oxide is less than 1 nm after CMP [43][44][45][46]. The thickness of the SiO2 layer above the top Si layer is controlled to be 0.18 μm, which is the commonly used thickness in foundries such as CUMEC.…”

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confidence: 99%

Broadband Polarization-Independent Edge Couplers With High Efficiency Based on SiN-Si Dual-Stage Structure

Jiang,

Zhang,

Liu

2024

IEEE Photonics J.

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Silicon nitride (SiN) plays a critical role in silicon photonics because of its lower refractive index, low waveguide loss, broad operating bandwidth and compatibility with complementary metal oxide semiconductor (CMOS) fabrication process. Here, we propose a polarization-independent subwavelength grating (SWG) edge coupler with high efficiency based on SiN-Si dual-stage structure with a length of only 315.8 μm. Such a structure can be fabricated on 8-inch silicon photonics pilot lines and doesn't require special fabrication processes for making it suspended. We simulate the minimum TE/TM light coupling loss from a standard SMF-28 fiber to be 0.61 dB/0.95 dB with polarization dependent loss (PDL) less than 0.4 dB in the whole band between 1500 nm and 1600 nm.

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Novel green chemical mechanical polishing by controlling pH values and redox reaction for achieving atomic surface of a nickel alloy

Li,

Zhang,

Shi

et al. 2024

Applied Surface Science

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Effect of cations on the improvement of material removal rate of silicon wafer in chemical mechanical polishing

Cited by 10 publications

References 30 publications

Mechanism Exploration of the Effect of Polyamines on the Polishing Rate of Silicon Chemical Mechanical Polishing: A Study Combining Simulations and Experiments

Mechanism Exploration of the Effect of Polyamines on the Polishing Rate of Silicon Chemical Mechanical Polishing: A Study Combining Simulations and Experiments

Broadband Polarization-Independent Edge Couplers With High Efficiency Based on SiN-Si Dual-Stage Structure

Novel green chemical mechanical polishing by controlling pH values and redox reaction for achieving atomic surface of a nickel alloy

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