2013
DOI: 10.1016/j.tsf.2013.04.067
|View full text |Cite
|
Sign up to set email alerts
|

Effect of CdCl2 treatment on structural and electronic property of CdTe thin films deposited by magnetron sputtering

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1
1

Citation Types

4
21
0

Year Published

2014
2014
2021
2021

Publication Types

Select...
8

Relationship

1
7

Authors

Journals

citations
Cited by 56 publications
(25 citation statements)
references
References 20 publications
4
21
0
Order By: Relevance
“…Generally, angular position shifts toward higher and lower sides due to decrease and increase in the corresponding lattice constants respectively. The results are in good agreement with the earlier reported works of Islam et al [16,38].…”
Section: Structural Analysissupporting
confidence: 93%
“…Generally, angular position shifts toward higher and lower sides due to decrease and increase in the corresponding lattice constants respectively. The results are in good agreement with the earlier reported works of Islam et al [16,38].…”
Section: Structural Analysissupporting
confidence: 93%
“…The thickness of the CdTe thin film was kept as around 4-6 lm to make sure that the photons were sufficiently absorbed. The fabricated CdSe/CdTe layers were treated by using the usual CdCl 2 saturated solution, and were annealed at 385°C for 35 min to form the rich Te layer, which can increase the p-type property of CdTe thin film [14,15]. A thickness of about 70 nm of ZnTe:Cu back contact layer grown by PLD under room temperature was covered on the etched CdTe layer.…”
Section: Methodsmentioning
confidence: 99%
“…After the deposition, the samples were left in the chamber until the temperature cooled down to room temperature. The CdCl 2 thermal treatment was employed using the parameters optimized previously [32]: the samples were dipped into 0.3 M CdCl 2 solution for 10 s, the mixed samples were dried in air at about 10 min and treated in an evacuated furnace of N 2 /O 2 ambient for 15 min with a constant pressure (500 mT) and temperature (390°C). At the end of the annealing process, the samples were left in the annealing chamber until the chamber is cooled down to room temperature.…”
Section: Methodsmentioning
confidence: 99%
“…In fact, the chloride activation induces crystal regrowth in CdTe films. The wet process CdCl 2 activation was first optimized [32] and then employed for crystal regrowth in CdTe films. The SEM images (Fig.…”
Section: Cdte Thin Filmmentioning
confidence: 99%