Effect of CdSe nanoparticles in polymethylmethacrylate tunneling layer on the performance of nonvolatile organic memory device

Kim, Jungmin; Shin, Ik‐Soo; Yoo, Seok-Hyun; Jeun, Jun-Ho; Lee, Ji Hee; Kim, Ayoung; Kim, Han‐Soo; Ge, Ziyi; Hong, Jong‐In; Bang, Jin Ho; Kim, Yong−Sang

doi:10.1016/j.mee.2012.07.101

Cited by 15 publications

(4 citation statements)

References 22 publications

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“…Han et al [11] reported that CulnS 2 -ZnS Quantum dots embedded in PMMA (polymethylmethacrylate). Kim et al [12] fabricated resistive bistable switching device utilizing CdSe nanoparticles in PMMA tunnelling layer. Mingdong et al [13] showed that graphene oxide used in carrier transport mechanism of write-once-read-many times.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of bistable switching device using CdS nanorods embedded in PMMA (polymethylmethacrylate) nanocomposite

Ganesh

Elamaran²,

Navaneethan

et al. 2015

J Mater Sci: Mater Electron

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An organic bistable memory device was fabricated using CdS NR's/PMMA (polymethylmethacrylate) nanocomposite sandwiched between ITO and Al thin film. XRD analysis confirmed that CdS NR's reveals wurtzite hexagonal phase. FESEM and TEM images showed the monodispersed rod-like morphology. The nanorods were uniformly dispersed in the PMMA (polymethylmethacrylate) layer. EDX spectrum confirms that the product consists of only Cd and S elements. No other impurities were found. UVvisible absorption of CdS NR's showed a slight blue shift. The photoluminescence spectra of CdS NR's spectra showed surface defects which may be due to sulfur vacancies in surface of nanorods. The CdS NR's polymer nanocomposite showed better thermal stability. The current-voltage (C-V) measurement of ITO/CdS NR's/Al showed a clockwise hysteresis with flatband shift voltage in C-V curve for the device.

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Section: Introductionmentioning

confidence: 99%

Fabrication of bistable switching device using CdS nanorods embedded in PMMA (polymethylmethacrylate) nanocomposite

Ganesh

Elamaran²,

Navaneethan

et al. 2015

J Mater Sci: Mater Electron

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“…Initially, the two devices exhibited a high resistance state (OFF state) at low voltage (0-0.9 V) region. [17][18][19][20][21][22][23] To interpret the switching mechanism, we characterized the ON/OFF currents dependency on cell size, as shown in Figure 2e. While, in case of the memory device without Ag NPs layer, this switching behavior took place at 4.2 V, which is higher than that of other reference device.…”

Section: Doi: 101002/aelm201800503mentioning

confidence: 99%

“…During measurement, the readout voltage of 0.2 V was sustained and no electrical degradation can be observed of the memory device with a high ON/OFF ratio of 1300 (inset in Figure b) during the measurement exceeding 10 4 s. The statistical distribution of switching voltage was plotted in Figure c by measuring 100 randomly selected memory cells. The set voltage ranging from 0.2 to 1.6 V with a center at 0.9 V suggests that our method is a promising application in fabricating polymer memory devices with ultra‐low switching voltage with respect to other reported PMMA‐based memories (Figure d) . To interpret the switching mechanism, we characterized the ON/OFF currents dependency on cell size, as shown in Figure e.…”

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confidence: 94%

Control of Resistive Switching Voltage by Nanoparticle‐Decorated Wrinkle Interface

Mao

Zhou

Wang

et al. 2018

Adv Elect Materials

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The ORCID identification number(s) for the author(s) of this article can be found under https://doi.org/10.1002/aelm.201800503. Polymer Memory DevicesPolymer memory devices consisting of a memristive electroactive layer sandwiched between two electrodes is a promising candidate for future emerging memory technology because of its simple architecture as well as superior properties of fast access and store speed, high-density with 3D stacks from Figure 4. a) The plot of current as function of applied voltage for the WORM memory device in the positive sweep. Schematic diagrams of the proposed resistance switching mechanism for w-rGO/ Ag NPs/PMMA/Al memory device: b) the initial state (OFF state, region A), and c) the high current state (ON state, region B).

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“…Metal chalcogenides are of greater interest due to their potential applications like optoelectronics devices, thermo electric refrigerators, solar cells [2], memory switching devices [3] and holographic recording devices [4], etc. Many researchers have reported on the metal nano particles using different techniques for various device fabrications [5,6]. Nano materials like SnSe and SnSe 2 are novel efficient materials, because of their excellent opto-electric properties, low dielectric constant and wide range of applications in the field of electronic device fabrications [7].…”

Section: Introductionmentioning

confidence: 99%

A study on the role of surfactant on the layered growth of SnSe2 for electrical applications

Mary

Fernández

Sakthivel

et al. 2016

J Mater Sci: Mater Electron

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Nano powder of SnSe 2 was synthesized using two different surfactants, such as poly-ethelene glycol (PEG) and sodium dodecyl sulphate (SDS) through a simple hydrothermal method. The as-prepared nano powders were confirmed by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), energy dispersive X-ray (EDS). The XRD analysis reveals that the synthesized material belongs to hexagonal structure. FTIR confirms the presence of various vibrational frequencies. The elemental weight percentage of the material was calculated from EDS analysis. The title compound was characterized by scanning electron microscopy and dielectric analysis. The surface morphology of SnSe 2 particles with PEG shows the clustered layers of flake-liked structures and SDS shows the flower like structures. Low dielectric constant confirms the suitability of the material for microelectronic device fabrication.

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Effect of CdSe nanoparticles in polymethylmethacrylate tunneling layer on the performance of nonvolatile organic memory device

Cited by 15 publications

References 22 publications

Fabrication of bistable switching device using CdS nanorods embedded in PMMA (polymethylmethacrylate) nanocomposite

Fabrication of bistable switching device using CdS nanorods embedded in PMMA (polymethylmethacrylate) nanocomposite

Control of Resistive Switching Voltage by Nanoparticle‐Decorated Wrinkle Interface

A study on the role of surfactant on the layered growth of SnSe2 for electrical applications

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