Effect of CdTe nucleation layer on the performance of CdS/CdTe thin film solar cells

Gajanayake, G. K. U. P.; Lakmal, A. A. I.; Silva, D. S. M. De; Dassanayake, B.S.

doi:10.1007/s10854-023-09895-6

Cited by 5 publications

(4 citation statements)

References 23 publications

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“…Similarly, higher the interference, higher is the value of d. Therefore, there may be some interrelation between the reorganization energy and the BW of electron transfer. In order to investigate further, a simulation was carried out by putting the values of S λ and κ BW in different sets of equations and a following correlation coefficient 𝑐 was achieved as shown in equation (8). c = κ BW S λ …….…”

Section: Reorganization Energy and Length Of Reaction Site (X)mentioning

confidence: 99%

“…c = κ BW S λ ……. (8) The value of 𝑐 (with the unit Å kJ/mol p[Cd] (p[Interfering ion]) 2 ) is almost constant and lies in the range ~0.012-0.016.…”

Section: Reorganization Energy and Length Of Reaction Site (X)mentioning

confidence: 99%

“…3 Cadmium contamination raises from fuel combustion, fertilizers, industrial wastes. [4][5][6][7][8] Selectivity is an important performance parameter for an electrochemical sensor. 9,10 To characterize the selectivity, i.e.…”

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confidence: 99%

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Estimation of thermodynamics properties as a measure of the extent of interference in a conducting polymer based electrochemical aqueous ion sensor

Dutta,

Panda

2024

Int J Sci Rep

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Background: Interference of other ions towards the target analyte in an electrochemical sensor is typically estimated utilizing the peak reduction (PR) technique and the selectivity coefficient technique, both of which have limitations. In our earlier works, a scale of interference was developed using the barrier width (BW) technique based on Simmon’s model utilizing a conducting polymer-based sensor for the detection of Cd2+ by square wave voltammetry (SWV). Also, a new scale of interference was generated with higher resolution by incorporating the BW technique along with adsorption isotherms and the PR technique. Methods: The present work takes the investigation further at the electrode-electrolyte interface to explain the interference effect using thermodynamic parameters such as the partition coefficient, enthalpy and reorganization energy. The length of the reaction site for Cd2+ can also measure interference effect. In this work, SWV for Cd2+ detection in presence of interfering species at different temperatures were conducted, -ΔGad values were extracted and all the thermodynamic parameters were evaluated. The novelty of this work lies in incorporation of these thermodynamic parameters along with BW values (d) to explain the interference phenomena. Results: The variation of the thermodynamic properties for Cd2+ in presence of interfering species were examined. Correlation coefficients were developed from the thermodynamic parameters and the d values to explain the extent of interference. Conclusions: This study can provide information on the thermodynamic properties which can be predicted from BW technique. The correlation coefficients would help obtain an estimate of the interference with the need of lesser number of experiments.

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Section: Reorganization Energy and Length Of Reaction Site (X)mentioning

confidence: 99%

“…c = κ BW S λ ……. (8) The value of 𝑐 (with the unit Å kJ/mol p[Cd] (p[Interfering ion]) 2 ) is almost constant and lies in the range ~0.012-0.016.…”

Section: Reorganization Energy and Length Of Reaction Site (X)mentioning

confidence: 99%

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Estimation of thermodynamics properties as a measure of the extent of interference in a conducting polymer based electrochemical aqueous ion sensor

Dutta,

Panda

2024

Int J Sci Rep

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“…Cadmium sulfide (CdS) is the most promising n-type semiconductor material in thin-film (CdTe/CIGS/CZTS) solar cells and next-generation optoelectronic devices; because of its direct bandgap (2.42 eV) 1 , high absorption coefficient 2,3 , having an absorption edge at 510 nm 4,5 . Researchers have reported the confirmable coating of CdS nanostructured film via a solution-based approach on CdTe/CIGS/CZTS layer to fabricate a solar cell device [6][7][8][9] . It is inexpensive and forms a better interface with an absorber material layer.…”

Section: Introductionmentioning

confidence: 99%

Solution-Processed Nanostructured CdS Thin Film with Improved Optoelectronic Properties

Mudike¹,

Dhage²,

Shivaramu³

et al. 2023

J. ISAS

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Nanostructured CdS thin films are essential for efficient electron transport and they act as an ideal buffer layer in CIGS/CZTS/CdTe thin-film solar cells. Herein, low-temperature processed CdS nanostructured thin film on a glass substrate by chemical bath deposition for its application in optoelectronic devices is reported. As synthesized, CdS nanostructured thin films are exhibited polycrystalline, confirmed using X-ray diffraction/transmission electron microscopy. Further, polycrystalline (hexagon/cubic) nature reconfirmed by Raman band at 305 cm-1 of as-grown films. The surface morphology and EDS of CdS thin films reveal uniformity on the surface with non-cuboid nanoparticles and nearly stoichiometric. The optical band gap of CdS nanostructured thin films was found to be 2.3 eV, properties indicating its suitability as a buffer layer in CIGS/CZTS thin-film solar cells.

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Introducing Spin-coated ZnO Anti-reflection Coating for CdS/CdTe Solar Cells

Wijesingha,

Gajanayake,

Wickramasinghe

et al. 2024

J. Electron. Mater.

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Effect of CdTe nucleation layer on the performance of CdS/CdTe thin film solar cells

Cited by 5 publications

References 23 publications

Estimation of thermodynamics properties as a measure of the extent of interference in a conducting polymer based electrochemical aqueous ion sensor

Estimation of thermodynamics properties as a measure of the extent of interference in a conducting polymer based electrochemical aqueous ion sensor

Solution-Processed Nanostructured CdS Thin Film with Improved Optoelectronic Properties

Introducing Spin-coated ZnO Anti-reflection Coating for CdS/CdTe Solar Cells

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