2014
DOI: 10.1016/j.tsf.2013.11.056
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Effect of cerium doping on the electrical properties of ultrathin indium tin oxide films for application in touch sensors

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Cited by 9 publications
(7 citation statements)
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“…Limited reports have been made that Ce:In 2 O 3 thin films can be obtained by sputtering, but the resulting films do not have an optimum grain size to be used as transparent conductors. 52,53 We also found that it is difficult to obtain high quality Ce:In 2 O 3 films directly from the combustion method. The Ce:In 2 O 3 films prepared by the combustion method without the use of NCs have high resistances, exceeding 100 000 Ω•cm, so that presynthesized Ce:In 2 O 3 NCs were necessary to achieve the favorable results reported here.…”
Section: Resultsmentioning
confidence: 95%
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“…Limited reports have been made that Ce:In 2 O 3 thin films can be obtained by sputtering, but the resulting films do not have an optimum grain size to be used as transparent conductors. 52,53 We also found that it is difficult to obtain high quality Ce:In 2 O 3 films directly from the combustion method. The Ce:In 2 O 3 films prepared by the combustion method without the use of NCs have high resistances, exceeding 100 000 Ω•cm, so that presynthesized Ce:In 2 O 3 NCs were necessary to achieve the favorable results reported here.…”
Section: Resultsmentioning
confidence: 95%
“…High mobility associated with minimal defect scattering has also been proposed in CdO thin films doped with yttrium, dysprosium, scandium, and indium, prepared by vapor phase deposition. However, the high toxicity of cadmium hinders the practical application of CdO-based TCO films. Limited reports have been made that Ce:In 2 O 3 thin films can be obtained by sputtering, but the resulting films do not have an optimum grain size to be used as transparent conductors. , We also found that it is difficult to obtain high quality Ce:In 2 O 3 films directly from the combustion method. The Ce:In 2 O 3 films prepared by the combustion method without the use of NCs have high resistances, exceeding 100 000 Ω·cm, so that presynthesized Ce:In 2 O 3 NCs were necessary to achieve the favorable results reported here.…”
Section: Resultsmentioning
confidence: 99%
“…We therefore hypothesized that cerium-doped indium oxide (Ce:In 2 O 3 ) nanocrystals would display higher electronic mobility and higher Q LSPR peaks compared to Sn:In 2 O 3 . The few literature accounts of Ce-doped In 2 O 3 thin films report high mobility, which supports this hypothesis, though these studies used tin or hydrogen as codopants and did not study the microscopic mechanisms responsible for enhanced mobility. , …”
mentioning
confidence: 93%
“…The few literature accounts of Cedoped In 2 O 3 thin films report high mobility, which supports this hypothesis, though these studies used tin or hydrogen as codopants and did not study the microscopic mechanisms responsible for enhanced mobility. 11,12 For the first time, we synthesized colloidal Ce:In 2 O 3 nanocrystals by adapting a typical procedure used to synthesize Sn:In 2 O 3 nanocrystals. 3,7 In brief, indium acetylacetonate, a cerium precursor, and oleylamine were mixed and heated to 250 °C for 2 h to form colloidal nanocrystals under an inert atmosphere using standard Schlenk line techniques.…”
mentioning
confidence: 99%
“…This choice was made because we propose later on in this paper a feasible structure with an ITO slab as the ENZ material that can show this effect experimentally. ITO films can be built [28][29][30] with thicknesses ranging from ∼4 to ∼600 nm to have electron densities in between that of noble metals (10 22 cm −3 ) and doped semiconductors (10 19 cm −3 ). Also, significant tuning of the electron density of ITO films can be made with electrical or optical methods [31], allowing its use in near-infrared optical modulators and sensing devices [32,33].…”
Section: Introductionmentioning
confidence: 99%