Effect of channel doping on the low-frequency noise in GaN/AlGaN heterostructure field-effect transistors

Balandin, Alexander A.; Морозов, С. В.; Wijeratne, G.; Cai, Shiwei; Li, R.; Li, J.; Wang, K. L.; Viswanathan, C.R.; Dubrovskiĭ, Yu. V.

doi:10.1063/1.124917

Cited by 36 publications

(10 citation statements)

References 11 publications

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“…It is also not clear which model (the mobility fluctuation or the number fluctuation through random carrier trapping-detrapping) describes the 1/f noise in the GaN system the best. [10][11][12] It has been previously shown that GaN/AlGaN heterostructures have large piezoelectric coefficients which lead to strong electric polarization on (0001) faces of the wurtzite structures typically used to form GaN HFETs. [13][14] The latter results in appreciable charge densities, which are large enough to design HFETs without any channel doping.…”

Section: Introductionmentioning

confidence: 99%

Investigation of flicker noise and deep-levels in GaN/AlGaN transistors

Balandin

Wang

Cai

et al. 2000

Journal of Elec Materi

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We report flicker noise measurements combined with deep-level transient spectroscopy of the doped and undoped channel GaN/AlGaN heterostructure field-effect transistors. The low-temperature noise spectra for the doped devices show clear generation-recombination peaks. The value of the activation energy extracted from these noise peaks is consistent with the activation energies measured using deep-level spectroscopy. Our results indicate that the inputreferred noise spectral density of the undoped channel devices is much smaller (up to two orders of magnitude) than that of the doped channel devices with comparable electric characteristics. The additional defects due to doping add up to the generation-recombination and flicker noise.

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Section: Introductionmentioning

confidence: 99%

Investigation of flicker noise and deep-levels in GaN/AlGaN transistors

Balandin

Wang

Cai

et al. 2000

Journal of Elec Materi

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“…Special processing steps or device designs can lead to substantial reduction in the noise level. For example, it was shown that GaN/AlGaN heterostructure field-effect transistors (HFETs) where the high current density is achieved via increasing Al content in the barrier layer -the so-called "piezo-doping" -reveal lower 1/f noise level than GaN/AlGaN HFETs with conventional channel doping [46]. Several possible methods of 1/f noise reduction in graphene FETs have also been reported.…”

Section: Noise Reduction In Graphene Devicesmentioning

confidence: 99%

Low-frequency 1/f noise in graphene devices

2013

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“…To compare with the experimental noise data, we included in Figure 4 the measured noise densities at different temperatures from AlGaN/AlN HFET reported in Ref. [30]. The data are normalized at certain low frequency values and shown as points in the figure.…”

Section: Resultsmentioning

confidence: 99%

Capacitance–Voltage Spectroscopy of Trapping States in GaN/AlGaN Heterostructure Field-Effect Transistors

Liu¹,

Chen²,

Balandin³

et al. 2006

Journal of Nanoelectronics and Optoelectronics

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In AlGaN/GaN heterostructure field-effect transistor structures, the surface defects and dislocations may serve as trapping centers and affect the device performance via leakage current and lowfrequency noise. In this paper we report results of our investigation of the trapping characteristics of SiO 2 -passivated Al 0 2 Ga 0 8 N/GaN heterostructure field-effect transistors using the capacitancevoltage (CV) profiling technique. From the measured frequency dependent CV data, we identified the characteristics of the traps at the AlGaN/GaN interface adjoining the channel and on the surface along the ungated region between the gate and drain. Based on the measured data, the influence of the channel traps on the low-frequency noise spectra and the effect of the surface traps on possible leakage noise are analyzed and compared with the previous studies.

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Effect of channel doping on the low-frequency noise in GaN/AlGaN heterostructure field-effect transistors

Abstract: Low frequency noise in GaN/AlGaN heterostructure field effect transistors in non-ohmic region Low-frequency noise in AlGaN/GaN heterojunction field effect transistors on SiC and sapphire substrates

Cited by 36 publications

References 11 publications

Investigation of flicker noise and deep-levels in GaN/AlGaN transistors

Investigation of flicker noise and deep-levels in GaN/AlGaN transistors

Low-frequency 1/f noise in graphene devices

Capacitance–Voltage Spectroscopy of Trapping States in GaN/AlGaN Heterostructure Field-Effect Transistors

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