Effect of Charge Bump on Series Resistance and Dynamic Performance of 4H-SiC Ka-Band IMPATT Oscillator

SiC Devices on Different Polytypes: Prospects and Challenges

“…Similarly for TM 6H-SiC and 3C-SiC diodes, the value of -ZRp reduces by 20.0% and 10.0 %, respectively, as Mn decreases from 106 to 25 (Table 4) Thus the studies reveal that, effects of photo-illumination on the frequency up shift as well as on the modulation of the THz behavior of the SiC devices are found to be more pronounced in FC illumination configuration than that for TM illumination configuration under similar operating condition. These results show an identical trend as observed previously for MM-wave SiC devices [4]. To study the microscopic properties of the devices the authors has computed the spatial distribution of negative resistivity (R(x)) in the depletion layer of the device, which would give an insight into the region of depletion layer that contribute to THz power.…”

“…The operation of an IMPATT device is based on two basic physical mechanisms: one is the avalanche multiplication caused by impact ionization [4] and the other is the finite transit time required by the charge carriers to cross the depletion layer with saturated drift velocity. The avalanche process turns out to be an inductive process causing a phase delay between the applied r.f.…”