Effect of charge manipulation on scanning tunneling spectra of single Mn acceptors in InAs

Marczinowski, Felix; Wiebe, Jens; Meier, F.; Hashimoto, Katsufumi; Wiesendanger, R.

doi:10.1103/physrevb.77.115318

Cited by 64 publications

(67 citation statements)

References 26 publications

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“…In that case the size of the rim around Mn atoms in GaAs does not significantly change whereas the rings of ionization around Si in GaAs and Mn in InAs are reduced in diameter where neighboring rings overlap. 18,20 We conclude that the Coulomb effect leading to a ring of ionization and mapping genuine properties of the Mn wave function are strongly entangled resulting in the rectangular rims around Mn atoms below GaAs͑110͒.…”

Section: Resultsmentioning

confidence: 99%

Enhanced binding energy of manganese acceptors close to the GaAs(110) surface

et al. 2010

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Scanning tunneling spectroscopy was performed at low temperature on buried manganese ͑Mn͒ acceptors below the ͑110͒ surface of gallium arsenide. The main Mn-induced features consisted of a number of dI / dV peaks in the band gap of the host material. The peaks in the band gap are followed by negative differential conductivity, which can be understood in terms of an energy-filter mechanism. The spectroscopic features detected on the Mn atoms clearly depend on the depth of the addressed acceptor below the surface. Combining the depth dependence of the positions of the Mn-induced peaks and using the energy-filter model to explain the negative resistance qualitatively proves that the binding energy of the hole bound to the Mn atom increases for Mn acceptors closer to the surface.

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Section: Resultsmentioning

confidence: 99%

Enhanced binding energy of manganese acceptors close to the GaAs(110) surface

et al. 2010

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“…Consequently, the wavy arcs shrink with increasing bias voltages and finally disappear. This behaviour, due to tip-induced impurity charging [12][13][14] , is characteristic of poor electronic screening in a weakly insulating state.A wide variety of spectral shapes originating from electric heterogeneity were found in these samples. A typical example of the spectra is, as spectrum number 1 in Fig.…”

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confidence: 99%

Visualization of the emergence of the pseudogap state and the evolution to superconductivity in a lightly hole-doped Mott insulator

et al. 2012

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Superconductivity emerges from the cuprate antiferromagnetic Mott state with hole doping. The resulting electronic structure 1 is not understood, although changes in the state of oxygen atoms seem paramount 2-5 . Hole doping first destroys the Mott state, yielding a weak insulator 6,7 where electrons localize only at low temperatures without a full energy gap. At higher doping levels, the 'pseudogap', a weakly conducting state with an anisotropic energy gap and intra-unit-cell breaking of 90 • rotational (C 4v ) symmetry, appears 3,4,8-10 . However, a direct visualization of the emergence of these phenomena with increasing hole density has never been achieved. Here we report atomic-scale imaging of electronic structure evolution from the weak insulator through the emergence of the pseudogap to the superconducting state in Ca 2− x Na x CuO 2 Cl 2 . The spectral signature of the pseudogap emerges at the lowest doping level from a weakly insulating but C 4v -symmetric matrix exhibiting a distinct spectral shape. At slightly higher hole density, nanoscale regions exhibiting pseudogap spectra and 180 • rotational (C 2v ) symmetry form unidirectional clusters within the C 4v -symmetric matrix. Thus, hole doping proceeds by the appearance of nanoscale clusters of localized holes within which the broken-symmetry pseudogap state is stabilized. A fundamentally two-component electronic structure 11 then exists in Ca 2− x Na x CuO 2 Cl 2 until the C 2v -symmetric clusters touch at higher doping levels, and the long-range superconductivity appears.To visualize at the atomic scale how the pseudogap and superconducting states are formed sequentially from the weak insulator state, we performed spectroscopic imaging scanning tunnelling microscopy (SI-STM) studies on Ca 2−x Na x CuO 2 Cl 2 (0.06 ≤ x ≤ 0.12; see also the Methods sections). The crystal structure is simple tetragonal (I 4/mmm) and thereby advantageous because the CuO 2 planes are unbuckled and free from orthorhombic distortion. More importantly Ca 2 CuO 2 Cl 2 can be doped from the Mott insulator to the superconductor by introduction of Na atoms. Figure 1c,d shows differential conductance images measured using SI-STM of bulk-insulating x = 0.06 and x = 0.08 samples taken in the field of views of the topographic images in Fig. 1a,b. The wavy, bright, arcs in Fig. 1c,d have never been observed in superconducting samples (x > 0.08) but appear only in such quasi-insulating samples (x ≤ 0.08). They are created by spectral peaks in differential conductance spectra whose energy is dependent on location (Fig. 1f). Consequently, the wavy arcs shrink with increasing bias voltages and finally disappear. This behaviour, due to tip-induced impurity charging [12][13][14] , is characteristic of poor electronic screening in a weakly insulating state.A wide variety of spectral shapes originating from electric heterogeneity were found in these samples. A typical example of the spectra is, as spectrum number 1 in Fig. 1e, the V-shaped pseudogap (∼0.2 eV) spectrum with a small dip (∼20...

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“…For semiconductor materials, some of the recent studies of substitutional impurities 4,5,6 have benefitted from the type of electrostatic modeling described above. Further analysis to quantitatively handle the Coulomb potential arising from an individual charge on a semiconductor surface (i.e.…”

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confidence: 99%

“…Since then, many other applications of STM/STS on semiconductors have been developed, including crosssectional STM (XSTM) of semiconductor heterostructures. 3 Most recently, lowtemperature STS on semiconductors has enabled detailed studies of isolated substitutional impurities on surfaces 4,5,6 as well as transport limitations of carriers in the semiconductor itself. 7 Over the past decade, much work has been performed to enable quantitative interpretation of tunneling spectra of semiconductors.…”

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confidence: 99%

A prospective: Quantitative scanning tunneling spectroscopy of semiconductor surfaces

Feenstra

2009

Surface Science

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Effect of charge manipulation on scanning tunneling spectra of single Mn acceptors in InAs

Cited by 64 publications

References 26 publications

Enhanced binding energy of manganese acceptors close to the GaAs(110) surface

Enhanced binding energy of manganese acceptors close to the GaAs(110) surface

Visualization of the emergence of the pseudogap state and the evolution to superconductivity in a lightly hole-doped Mott insulator

A prospective: Quantitative scanning tunneling spectroscopy of semiconductor surfaces

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