Effect of chemical treatment on photoluminescence spectra of SiO x layers with built-in Si nanocrystals

Indutnyy, I. Z.; Maĭdanchuk, I. Yu.; Min'ko, V.I.; Shepelyavyi, P. E.; Dan’ko, Viktor

doi:10.1134/s1063782607100223

Cited by 8 publications

(9 citation statements)

References 16 publications

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“…Since only the vibrations in the silicon-oxygen phase are active in this spectral range, while the Si-Si bond vibrations cannot be recorded, this method can be used to determine the composition of the oxide matrix in both as-prepared and annealed samples containing the silicon phase. The stoichiometric parameter x determined by this method is 1.42 and 1.51 for the samples deposited at the angles 60° and 75°, respectively [7]. The difference in chemical composition is related to the porosity of the films, as described previously [7,8].…”

Section: Resultsmentioning

confidence: 96%

“…The stoichiometric parameter x determined by this method is 1.42 and 1.51 for the samples deposited at the angles 60° and 75°, respectively [7]. The difference in chemical composition is related to the porosity of the films, as described previously [7,8]. During annealing, the SiO x oxide is layered into Si and SiO 2 , and the stoichiometric parameter of the oxide matrix (determined from the IR spectra) is x ≈ 1.9 for all the samples.…”

Section: Resultsmentioning

confidence: 98%

“…In the previous study [7], we suggested method of controlling the dimensions of Si nanoparticles in the oxide matrix, namely, the use of oblique deposition of Si monoxide thermally evaporated in vacuum. During such deposition, SiO x films with a porous (column-like) structure are formed.…”

Section: Introductionmentioning

confidence: 99%

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2009

Semicond. Phys. Quantum Electron. Optoelectron.

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The effect of treatment in saturated acetone vapors on the spectral composition and intensity of photoluminescence (PL) in porous oblique deposited SiO x films is studied. As a result of this treatment followed by high-temperature annealing at the temperature 930 °C, considerable PL intensity growth and the small blueshift of PL peak position are observed in the porous, column-like structure films containing Si nanocrystals. A more intense shortwave band (peak position-540-560 nm) appears in the PL spectrum of these structures, in addition to the longwave band (760-780 nm). Both PL bands in treated samples are characterized by monomolecular radiative recombination, which can be attributed to annihilation of excitons in silicon nanocrystals embedded into oxide matrix (longwave band) and in carbon-enriched matrix near surface of oxide nanocolumns (shortwave band). The possibility to control the PL characteristics of the porous structures in a wide spectral range by above treatment is shown.

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Section: Resultsmentioning

confidence: 96%

Section: Resultsmentioning

confidence: 98%

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Untitled

2009

Semicond. Phys. Quantum Electron. Optoelectron.

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“…The subsequent annealing of the film at 1100 ºC induces a phase separation producing Si nanocrystals of ~ 4 nm diameter [3].…”

Section: Experiments and Discussionmentioning

confidence: 99%

Femtosecond relaxation dynamics of photo-excited carriers in Si nanoparticles embedded in SiO<inf>2</inf> matrix

Kadan

Dan’ko

Индутный

et al. 2012

2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE)

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“…In above-mentioned publications [6][7][8][9] the obliquely deposited films were studied mainly with optical methods. The temperature of anneals in vacuum was restricted to 950-975 0 C to avoid the process of film sublimation and the duration of thermal annealing was limited to 15 minutes.…”

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confidence: 99%

EPR and emission study of silicon suboxide nanopillars

et al. 2013

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The results of correlated electron paramagnetic resonance (EPR) and photoluminescence (PL) study of obliquely deposited porous SiO x films after step-by-step 15 min annealing within 105 min in vacuum at 950 O C are presented. The low intensity symmetrical and featureless EPR line with a g-value g=2.0044 and a linewidth of 0.77 mT has been detected in as-sputtered films and attributed to dangling bonds (DB) of silicon atoms in amorphous SiO x domains with x=0.8. Successive annealing results in decreasing this line and the appearance of an intense EPR line with g=2.0025, linewidth of 0.11 mT and a hyperfine doublet with 1.6 mT splitting. According to the parameters this spectrum has been attributed to the EX center, a hole delocalized over four non-bridging oxygen atoms grouped around a Si vacancy in SiO 2 . The impact of chemical treatment before annealing and duration of anneals on the defect system, and a correlation of the PL intensity with decreasing of the DB EPR signal are discussed.

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Effect of chemical treatment on photoluminescence spectra of SiO x layers with built-in Si nanocrystals

Cited by 8 publications

References 16 publications

Untitled

Untitled

Femtosecond relaxation dynamics of photo-excited carriers in Si nanoparticles embedded in SiO<inf>2</inf> matrix

EPR and emission study of silicon suboxide nanopillars

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