Thallium bromide (TlBr) is a compound semiconductor with a band gap of 2.68 eV making it ideal for room temperature radiation detection. The high atomic numbers, 81 and 35, and the high density of 7.56 g/cm 3 give it excellent gamma-ray stopping power. TlBr is a cubic material that melts congruently at a relatively low temperature (∼480 • C). These properties make it relatively easy to grow good quality crystals with high yield. As a result of improvements in the purification of TlBr mobility-lifetime product of electrons, µτ e , is now on the order of 10 −2 cm 2 /V, which is similar to that of CZT. High µτ e enables the fabrication of thicker detectors with good charge collection and energy resolution. The properties of TlBr make it ideal for use in room temperature gamma radiation operation [1]. Single carrier devices such as small pixel arrays [2] and Frisch collar devices [3] which were developed for CZT can also been applied to TlBr. For example, better than 1% FWHM at 662 keV has been obtained for single pixel events with small (e.g., 3 × 3 pixels, 1-mm pitch, 5-mm thick) arrays.