Effect of CMP downward pressure on nano-scale residual stresses in dielectric films with Cu interconnects assessed by cathodoluminescence spectroscopy

Kodera, Masahito; Uekusa, S.; Kakinuma, Shigeru; Saijo, Yusuke; Fukunaga, Atsushi; Tsujimura, Manabu; Pezzotti, Giuseppe

doi:10.1109/iitc.2005.1499985

Cited by 1 publication

(6 citation statements)

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“…3. 12) The CL system was the same as that used in our former studies. [12][13][14] It was composed of three units; an SEM system, a spectrometer, and an analyses unit with a peak fitting algorithm.…”

Section: Methodsmentioning

confidence: 99%

“…12) The CL system was the same as that used in our former studies. [12][13][14] It was composed of three units; an SEM system, a spectrometer, and an analyses unit with a peak fitting algorithm. The exposure time of the electron beam (EB) on the specimen was 5 s per point, and the acceleration voltage of EB was 3 kV, corresponding to a penetrating depth of 200 nm.…”

Section: Methodsmentioning

confidence: 99%

“…Recently, it has been reported that the cathodoluminescence (CL) system enables us to detect nanometer-scale stress fields. [9][10][11][12][13][14] CL is induced by the electron irradiation on dielectric or semiconductor materials. This electron irradiation on the material causes an excitation of optically active parts, and their photon energy (CL wavelength) is altered by the amount of residual stress.…”

Section: Introductionmentioning

confidence: 99%

“…1(a) and 1(b). [11][12][13][14] The authors reported that the nanoscale stress field evaluation in SiO 2 materials with a Cu interconnect structure by CL spectroscopy was successfully carried out. [12][13][14] Thus, we expected that this CL technique would also be applicable to stress measurement with a STI structure.…”

Section: Introductionmentioning

confidence: 99%

“…[11][12][13][14] The authors reported that the nanoscale stress field evaluation in SiO 2 materials with a Cu interconnect structure by CL spectroscopy was successfully carried out. [12][13][14] Thus, we expected that this CL technique would also be applicable to stress measurement with a STI structure. In this study, we performed an overall estimation of stress fields with a STI structure filled with a SiO 2 film, applying CL and Raman spectroscopy for the stress measurement in the SiO 2 film and the Si substrate, respectively.…”

Section: Introductionmentioning

confidence: 99%

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Nanoscale Stress Field Evaluation with Shallow Trench Isolation Structure Assessed by Cathodoluminescence Spectroscopy, Raman Spectroscopy, and Finite Element Method Analyses

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Tsuchiya

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Stress engineering related to the LSI process is required. With shallow trench isolation (STI) structures, a high stress field causes a variation in electrical characteristics. Although stress fields in a Si substrate can be detected by Raman spectroscopy, no effective technique has been reported for the measurement of nanoscale stress fields in a dielectric material used for STI filling. Recently, we have reported that ''cathodoluminescence (CL) spectroscopy'' enables us to detect nanometer-scale stress fields in LSI structures. In this study, we performed the first estimation of the stress fields with a STI structure by CL and Raman spectroscopy, as well as finite element method (FEM) calculation. We were able to repeatedly acquire clear stress distributions by CL and Raman spectroscopy. Moreover, CL, Raman, and FEM results showed excellent agreement with one another, revealing that a large variation in stresses along the AA/STI boundary was induced by the intrinsic tensile stress of the SiO 2 film.

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