Abstract:The pure elements Ti, Zr, Cr, Nb were selected to produce an TiCrZrNb alloy target and deposited thin films thereof by a reactive high vacuum DC sputtering process. Nitrogen was used as the reactive gas to deposit the nitride thin films. The effect of nitriding on the properties of the TiCrZrNbN x film was tested by changing the nitrogen ratio of the atmosphere. All of the as-deposited TiCrZrNbN x nitride films exhibited an amorphous structure. The film thickness decreases by increasing the N 2 flow rate, because the Ar flow rate decreased and the target was poisoned by nitrogen. The hardness and Young's modulus were also measured by a nano-indenter. The hardness and Young's modulus of the TiCrZrNbN x nitride films were all lower than those of a TiCrZrNb metallic film.