Effect of Compensation Degree on the Detecting Properties of In-doped Cd0.9Zn0.1Te crystals

Sklyarchuk, V.; Zakharuk, Z. I.; Kolisnyk, M.H.; Rarenko, A. I.; Sklyarchuk, O. F.; Fochuk, P.M.

doi:10.15330/pcss.20.3.257-263

Cited by 1 publication

(1 citation statement)

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“…These compounds can be applied in medical devices, as sensitive elements of detection devices, including ionizing radiation detectors, and others. [1][2][3][4][5][6][7][8][9][10][11]. Thus, the electrophysical parameters of these crystals as well as information on the energy levels structure in the forbidden zone are important.…”

Section: Introductionmentioning

confidence: 99%

Investigation of Electronic Conductivity in PbI2:Hf Single Crystals

Furs

Hulaj

Shemet

2019

PCSS

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A study of the electron-hole conductivity in PbI2 single crystals doped with Hf (0.2 wt %) was conducted using the Wagner polarization cell method. The influence of the Hf alloying admixture (0.2 mass%) on the nature and parameters of lead diiodide’s electronic conductivity has been analyzed. Basing on the received current-potential dependences, p-type conductivity of a single crystal PbI2:Hf was established. The hole conductivity values (sро) were determined in the studied temperature range allowing to construct temperature dependence. The sро value for single crystal PbI2:Hf increased responsively to increasing temperature. For PbI2 and PbI2:Hf, a comparative analysis of the electron-hole conductivity was carried out. This investigation allowed determining the activation energy sро reduction from 0.47 eV to 0.32 eV due to hafnium doping. Consequently, the presence of Hf admixture in PbI2 crystals causes new impurity acceptor levels located at a distance of 0.64 eV from the upper limit of the valence zone.

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