Effect of composition and growth temperature on the dielectric properties of Pb(ScTa)1−xTixO3(PSTT) thin films grown by MOCVD

Lin, Chun-Hsiung; Friddle, P. A.; H., C.; Chen, Haydn

doi:10.1080/00150190108008743

Ferroelectrics

2001

DOI: 10.1080/00150190108008743

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Effect of composition and growth temperature on the dielectric properties of Pb(ScTa)_1−xTi_xO₃(PSTT) thin films grown by MOCVD

Chun-Hsiung Lin

P. A. Friddle

C. H.

et al.

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2002

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Dielectric and ferroelectric properties of highly oriented (Pb,Nb)(Zr,Sn,Ti)O3 thin films grown by a sol-gel process

Zhai¹,

Cheung²,

Xu³

et al. 2002

Applied Physics Letters

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Antiferroelectric (Pb,Nb)(Zr,Sn,Ti)O 3 thin films were deposited via a sol-gel process on LaNiO 3-coated silicon substrates. Films showed a strong ͑001͒ preferred orientation upon annealing at 500-700°C for 30 min. The dependence of electrical properties on film thickness has been studied, with the emphasis placed on field-induced phase switching from the antiferroelectric to the ferroelectric state. The decrease of film thickness led to an increase of the phase-switching field along with the appearance of remanent polarization. However, the dielectric constant and maximum polarization decreased with the reduction of film thickness. Saturation polarization was 35 C/cm 2 , which is equal to that observed in bulk samples.

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Dielectric and ferroelectric properties of highly oriented (Pb,Nb)(Zr,Sn,Ti)O3 thin films grown by a sol-gel process

Zhai¹,

Cheung²,

Xu³

et al. 2002

Applied Physics Letters

Self Cite

View full text Add to dashboard Cite

show abstract

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Effect of composition and growth temperature on the dielectric properties of Pb(ScTa)_1−xTi_xO₃(PSTT) thin films grown by MOCVD

Cited by 1 publication

References 12 publications

Dielectric and ferroelectric properties of highly oriented (Pb,Nb)(Zr,Sn,Ti)O3 thin films grown by a sol-gel process

Dielectric and ferroelectric properties of highly oriented (Pb,Nb)(Zr,Sn,Ti)O3 thin films grown by a sol-gel process

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