Effect of Compressed Plasma Flow on Tantalum-Titanium Thin Layer Deposited on Silicon Substrate

Abstract

Abstract:The interaction of a dense compressed nitrogen plasma flow with a system of Ta-Ti layers on a silicon substrate has been investigated. This plasma flow was generated in a quasi-stationary pulsed plasma accelerator that can provide a supersonic high energy plasma flux. The plasma pulse duration, discharge current, concentration, and energy densities absorbed by the target were 100 µs, 80 kA, 10 18 cm −3 , and 3-13 J/cm 2 respectively. The samples were exposed to a single plasma pulseor to a series of pulses and were characterized by scanning electron microscopy, X-ray diffraction, and energy dispersive X-ray analyses. The result showed that the changes in the elemental and structure phase compositions depends on energy and number of plasma pulses. Formation of Ti 5 Si 3 and Ta 2 N, are the main results of the current research.