2017
DOI: 10.1103/physrevb.96.205203
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Effect of Coulomb correlation on charge transport in disordered organic semiconductors

Abstract: Charge transport in disordered organic semiconductors, which is governed by incoherent hopping between localized molecular states, is frequently studied using a mean-field approach. However, such an approach only considers the time-averaged occupation of sites and neglects the correlation effect resulting from the Coulomb interaction between charge carriers. Here, we study the charge transport in unipolar organic devices using kinetic Monte Carlo simulations and show that the effect of Coulomb correlation is a… Show more

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Cited by 34 publications
(39 citation statements)
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“…Further progress was made in elucidating differences between ME and kMC models [119] and in addressing computational challenges of kMC methods such as parallelization, [121] explicit long-range Coulomb interaction, [122] and finite system sizes. [123] In combination, these developments resulted in a large gain in speed for modern kMC implementations.…”
Section: Mesoscalementioning
confidence: 99%
“…Further progress was made in elucidating differences between ME and kMC models [119] and in addressing computational challenges of kMC methods such as parallelization, [121] explicit long-range Coulomb interaction, [122] and finite system sizes. [123] In combination, these developments resulted in a large gain in speed for modern kMC implementations.…”
Section: Mesoscalementioning
confidence: 99%
“…It is common within the organic semiconductor community to model the total density of states (DOS) using a Gaussian distribution (alternative approaches using master equations have also been used [15,16]). Hopping charge transport in such a Gaussian DOS leads to a dependence of the (effective) mobility on the temperature, electric field, and charge-carrier density that has been parametrized by Pasveer et al and subsequently used in a series of papers describing unipolar transport in organic semiconductors [17,18].…”
Section: Introductionmentioning
confidence: 99%
“…It should be noted that for smaller thicknesses also the numerical model might no longer be applicable due to other effects becoming relevant, such as Coulomb correlations. 17 The major difference between the analytical and the numerical model is that in the numerical model the charge-carrier density and the electric field -and therefore the mobility -are dependent on the position across the semiconductor layer, whereas in the analytical description position-independent effective values are used. As demonstrated by the closely matched currentvoltage characteristics for both models, the use of these position-independent simplifications have negligible effects on the calculated current density.…”
mentioning
confidence: 99%