Effect of Counter-doping Thickness on Double-gate MOSFET Characteristics

Abstract

This paper presents a study of the influence of variation of counter doping thickness on short channel effect in symmetric double-gate (DG) nano MOSFETs. Short channel effects are estimated from the computed values of current-voltage (I-V) characteristics. Two dimensional Quantum transport equations and Poisson equations are used to compute DG MOSFET characteristics. We found that the transconductance (g m ) and the drain conductance (g d ) increase with an increase in p-type counter-doping thickness (T c ). Very high value of transconductance (g m = 38 mS/µm) is observed at 2.2 nm channel thickness. We have established that the threshold voltage of DG MOSFETs can be tuned by selecting the thickness of counter-doping in such device.