Effect of crucible rotation on oxygen concentration during unidirectional solidification process of multicrystalline silicon for solar cells

Adjustment of oxygen transport phenomena for Czochralski silicon crystal growth

“…Oxygen concentration affects the silicon melt's thermal properties, heat transfer characteristics, and crystal growth rates and therefore plays an important role in controlling the stability and rate of crystal growth during the CZ process [ [7] , [8] , [9] , [10] ]. Additionally, in producing high-quality silicon wafers, it is necessary to minimize oxygen impurities because oxygen impurities can cause light-induced degradation and negatively affect solar cell performance [ 11 , 12 ]. Haunschild et al [ 13 ] investigated the impact of oxygen concentration on silicon solar cells and accurately forecasted oxygen-induced losses of over 4% from PL images of multicrystalline silicon wafers.…”

“…During CZ growth, part of dissolved oxygen segregates into growing crystals, and the remaining oxygen evaporates on the free surface (the melt-argon gas interface) [ 17 ]. Various researchers have proposed different equations to determine the dissolved oxygen concentration based on the crucible temperature [ 7 , 8 , 11 , [18] , [19] , [20] ]. However, these equations do not incorporate the effects of crucible angular speed, crucible-melt friction, and/or the quality of the crucible coating.…”

Complementary Distribution of NN and NNO Complexes in Cast-Grown Multicrystalline Silicon for Photovoltaic Cells

“…This situation may depend significantly on the crystal growth conditions. Matsuo et al 17) investigated the effect of the crucible rotations upon the distribution of the O i concentration. Their simulation showed that the O i concentration in the melt silicon increased when the crucible rotation rate was increased.…”