Effect of Crystal-field Splitting on the Einstein Relation in Ternary Chalcopyrite Semiconductors

Mondal, M.; Ghatak, K. P.

doi:10.1088/0031-8949/30/3/010

Cited by 15 publications

(3 citation statements)

References 20 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The simplest way of analyzing such devices taking into account the degeneracy of bands is to use the appropriate Einstein relation to express the performance at the device terminals and switching speed in terms of carrier concentration [32,33]. The Einstein relation can, in general, be written as [34][35][36] …”

Section: Formulation Of the Tpm In The Presence Of Light Waves In IIImentioning

confidence: 99%

See 1 more Smart Citation

Influence of light waves on the thermoelectric power under large magnetic field in III-V, ternary and quaternary materials

Ghatak¹,

Bhattacharya

Pahari

et al. 2008

Ann. Phys.

View full text Add to dashboard Cite

Key words Light waves, thermoelectric power, III-V, ternary and quaternary materials. PACS 73.50.Pz, 78.55.Cr We study theoretically the influence of light waves on the thermoelectric power under large magnetic field (TPM) for III-V, ternary and quaternary materials, whose unperturbed energy-band structures, are defined by the three-band model of Kane. The solution of the Boltzmann transport equation on the basis of this newly formulated electron dispersion law will introduce new physical ideas and experimental findings in the presence of external photoexcitation. It has been found by taking n-InAs, n-InSb, n-Hg1−xCdxTe and n-In1−xGaxAsyP1−y lattice matched to InP as examples that the TPM decreases with increase in electron concentration, and increases with increase in intensity and wavelength, respectively in various manners. The strong dependence of the TPM on both light intensity and wavelength reflects the direct signature of light waves that is in direct contrast as compared with the corresponding bulk specimens of the said materials in the absence of external photoexcitation. The rate of change is totally band-structure dependent and is significantly influenced by the presence of the different energy-band constants. The well-known result for the TPM for nondegenerate wide-gap materials in the absence of light waves has been obtained as a special case of the present analysis under certain limiting conditions and this compatibility is the indirect test of our generalized formalism. Besides, we have also suggested the experimental methods of determining the Einstein relation for the diffusivity:mobility ratio, the Debye screening length and the electronic contribution to the elastic constants for materials having arbitrary dispersion laws.

show abstract

Section: Formulation Of the Tpm In The Presence Of Light Waves In IIImentioning

confidence: 99%

“…It affects many of the special features of the semiconductor devices, the carrier mobilities under different mechanisms of scattering, and the carrier plasmas in semiconductors [37,38]. The DSL can, in general, be written as [37,38] …”

Section: Formulation Of the Tpm In The Presence Of Light Waves In IIImentioning

confidence: 99%

Influence of light waves on the thermoelectric power under large magnetic field in III-V, ternary and quaternary materials

Ghatak¹,

Bhattacharya

Pahari

et al. 2008

Ann. Phys.

View full text Add to dashboard Cite

show abstract

“…(19) converts to the well-known form of three-band model of Kane as given by Eq. (23). The said model must be used as such in studying the electronic properties of nInAs where the spin-orbit splitting parameter is of the order of the band gap E g .…”

Section: Article In Pressmentioning

confidence: 99%

The Einstein relation for the diffusivity–mobility ratio in nonlinear optical, optoelectronic and the related materials

Sinha

Sharma

Barui

et al. 2007

Physica B: Condensed Matter

View full text Add to dashboard Cite

Influence of light waves on the thermoelectric power under large magnetic field in III‐V, ternary and quaternary materials

et al. 2008

View full text Add to dashboard Cite

We study theoretically the influence of light waves on the thermoelectric power under large magnetic field (TPM) for III‐V, ternary and quaternary materials, whose unperturbed energy‐band structures, are defined by the three‐band model of Kane. The solution of the Boltzmann transport equation on the basis of this newly formulated electron dispersion law will introduce new physical ideas and experimental findings in the presence of external photoexcitation. It has been found by taking n‐InAs, n‐InSb, n‐Hg1‐xCdxTe and n‐In1‐xGaxAsyP1‐y lattice matched to InP as examples that the TPM decreases with increase in electron concentration, and increases with increase in intensity and wavelength, respectively in various manners. The strong dependence of the TPM on both light intensity and wavelength reflects the direct signature of light waves that is in direct contrast as compared with the corresponding bulk specimens of the said materials in the absence of external photoexcitation. The rate of change is totally band‐structure dependent and is significantly influenced by the presence of the different energy‐band constants. The well‐known result for the TPM for nondegenerate wide‐gap materials in the absence of light waves has been obtained as a special case of the present analysis under certain limiting conditions and this compatibility is the indirect test of our generalized formalism. Besides, we have also suggested the experimental methods of determining the Einstein relation for the diffusivity:mobility ratio, the Debye screening length and the electronic contribution to the elastic constants for materials having arbitrary dispersion laws.

show abstract

Effect of Crystal-field Splitting on the Einstein Relation in Ternary Chalcopyrite Semiconductors

Cited by 15 publications

References 20 publications

Influence of light waves on the thermoelectric power under large magnetic field in III-V, ternary and quaternary materials

Influence of light waves on the thermoelectric power under large magnetic field in III-V, ternary and quaternary materials

The Einstein relation for the diffusivity–mobility ratio in nonlinear optical, optoelectronic and the related materials

Influence of light waves on the thermoelectric power under large magnetic field in III‐V, ternary and quaternary materials

Contact Info

Product

Resources

About