Effect of crystal orientation on dislocation formation in LEC GaAs

Fornari, R.; Paorici, C.; Zanotti, L.; Zecchina, L.

doi:10.1016/0022-0248(87)90141-2

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Formation Of Dislocations -The Next1

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1988

2017

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Cited by 4 publications

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“…This is about half way between the boule axis and its surface, in agreement with the observations. The models account for the variation of crystal perfection with the growth axis ; ( 100 ) grown GaAs is reported to contain more dislocations than (111) [35,37,40].…”

Section: Formation Of Dislocations -The Nextmentioning

confidence: 99%

Dislocation multiplication in GaAs : inhibition by doping

Djemel¹,

Castaing²,

Burle-Durbec³

et al. 1989

Rev. Phys. Appl. (Paris)

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The crystal quality improvement by electrical or isoelectronic doping of L.E.C. grown GaAs crystals is related to the thermoelastic modelling of stresses during growth. The dislocation structure in as-grown and annealed crystals is deduced, in particular with the help of the results of plastic deformation. The addition of various elements of the columns II-III-IV-V-VI in GaAs is considered and its influence on the establishment of the dislocation substructure is discussed

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Section: Formation Of Dislocations -The Nextmentioning

confidence: 99%